NPN Plastic Encapsulated Transistor CBI S9018W for AM FM Amplifier and Local Oscillator Applications

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Product Description

Product Overview

This NPN plastic-encapsulated transistor is designed for AM/FM amplifier and local oscillator applications in FM/VHF tuners. It offers a high current gain and a typical transition frequency (fT) of 1.1 GHz. The device is marked with 'J8'.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: Transistor (NPN)
Encapsulation: Plastic

Technical Specifications

Symbol	Parameter	Test Conditions	Value	Units
Maximum Ratings (TA=25 unless otherwise noted)
VCBO	Collector-Base Voltage		30	V
VCEO	Collector-Emitter Voltage		15	V
VEBO	Emitter-Base Voltage		5	V
IC	Collector Current - Continuous		50	mA
PC	Collector Power Dissipation		200	mW
Tj	Junction Temperature		150
Tstg	Storage Temperature		-55-150
Electrical Characteristics (Tamb=25 unless otherwise specified)
V(BR)CBO	Collector-base breakdown voltage	IC= 100A, IE=0	30	V
V(BR)CEO	Collector-emitter breakdown voltage	IC= 1mA, IB=0	15	V
V(BR)EBO	Emitter-base breakdown voltage	IE=100A, IC=0	5	V
ICBO	Collector cut-off current	VCB=12V, IE=0	0.05	A
ICEO	Collector cut-off current	VCE=12V, IB=0	0.1	A
IEBO	Emitter cut-off current	VEB= 3V, IC=0	0.1	A
hFE(1)	DC current gain	VCE=5V, IC= 1mA	105-195
VCE(sat)	Collector-emitter saturation voltage	IC=10mA, IB= 1mA	0.5	V
VBE(sat)	Base-emitter saturation voltage	IC=10mA, IB= 1mA	1.4	V
fT	Transition frequency	VCE=5V, IC= 5mA, f=400MHz	600	MHz