High reliability transistor CBI MMBT5551T for medium power amplification and switching applications

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Product Description

Product Overview

The MMBT5551T is a complementary NPN transistor designed for medium power amplification and switching applications. It offers excellent performance characteristics, making it an ideal choice for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

MARKING: G1

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0			180	V
Collector-emitter breakdown voltage	V(BR)CEO*	IC= 1mA, IB=0			160	V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0			6	V
Collector cut-off current	ICBO	VCB= 120V, IE=0			50	nA
Emitter cut-off current	IEBO	VEB=4V, IC=0			50	nA
DC current gain	hFE1*	VCE=5V, IC=1mA	80
DC current gain	hFE2*	VCE=5V, IC =10mA		100	300
DC current gain	hFE3*	VCE=5V, IC=50mA	50
Collector-emitter saturation voltage	VCEsat*	IC=10mA, IB=1mA		0.15		V
Collector-emitter saturation voltage	VCEsat*	IC=50mA, IB=5mA		0.2		V
Base-emitter saturation voltage	VBEsat*	IC=10mA, IB= 1mA		1		V
Base-emitter saturation voltage	VBEsat*	IC=50mA, IB= 5mA		1		V
Transition frequency	fT	VCE=10V, IC=10mA, f=100MHz		100	300	MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			6	pF
Input capacitance	Cib	VBE=0.5V, IC=0, f=1MHz			20	pF
Noise figure	NF	VCE=5V, Ic=0.25mA, f=10Hz to 15.7KHz, Rs=1k			8	dB
Collector-Base Voltage	VCBO				180	V
Collector-Emitter Voltage	VCEO				160	V
Emitter-Base Voltage	VEBO				6	V
Collector Current -Continuous	IC				0.6	A
Collector Power Dissipation	PC				200	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150