NPN High Voltage Transistor CBI FCX458 Featuring 400V Collector Emitter Voltage for Industrial Electronics
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Product Description
Product Overview
This NPN Silicon Planar High Voltage Transistor is designed for demanding applications requiring high voltage capabilities. It features a Collector-Emitter Voltage (VCEO) of 400V and a continuous collector current (IC) of up to 225mA. With its robust design and specified operating temperature range, this transistor is suitable for various industrial and electronic circuits where reliable high-voltage switching and amplification are essential.
Product Attributes
- Marking: 458
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Collector-Base Voltage | VCBO | 400 | V | |
| Collector-Emitter Voltage | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 5 | V | |
| Continuous Collector Current | IC | 225 | mA | |
| Peak Pulse Current | ICM | 1 | A | |
| Base Current | IB | 200 | mA | |
| Power Dissipation at Tamb=25C | Ptot | 1 | W | |
| Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | C | |
| ELECTRICAL CHARACTERISTICS (at Tamb = 25C) | ||||
| Collector-Base Breakdown Voltage | V(BR)CBO | 400 | V | IC=100A |
| Collector-Emitter Breakdown Voltage | VCEO(sus) | 400 | V | IC=10mA* |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A |
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=320V |
| Collector Cut-Off Current | ICES | 100 | nA | VCE=320V |
| Emitter Cut-Off Current | IEBO | 100 | nA | VEB=4V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 - 0.5 | V | IC=20mA, IB=2mA* |
| IC=50mA, IB=6mA* | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC=50mA, IB=5mA* |
| Base-Emitter Turn On Voltage | VBE(on) | 0.9 | V | IC=50mA, VCE=10V* |
| Static Forward Current Transfer Ratio | hFE | 100 - 100 | IC=1mA, VCE=10V | |
| 15 - 300 | IC=50mA, VCE=10V* | |||
| IC=100mA, VCE=10V* | ||||
| Transition Frequency | fT | 50 | MHz | IC=10mA, VCE=20V, f=20MHz |
| Output Capacitance | Cobo | 5 | pF | VCB=20V, f=1MHz |
| Switching times | ton toff | 135 Typical | ns | IC=50mA, VCC=100V, IB1=5mA, IB2=-10mA |
| 2260 Typical | ns | |||
*Measured under pulsed conditions. Spice parameter data is available upon request for this device.
Copyright All right reservedHeyuan China Base Electronics Technology Co., Ltd.
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