Medium Power NPN Transistor CBI 2SD1664U with 2 Amp Pulse Collector Current and SOT89 Package Type Design

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Product Description

NPN Silicon Epitaxial Medium Power Transistor

This NPN silicon epitaxial medium power transistor is designed for general-purpose applications. It offers reliable performance with defined current gain groups and breakdown voltage ratings.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Origin: China
Package Type: SOT-89

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings (Ta = 25 ℃)
Collector Base Voltage	VCBO	40	V
Collector Emitter Voltage	VCEO	32	V
Emitter Base Voltage	VEBO	5	V
Collector Current - DC	IC	1	A
Collector Current - Pulse	ICP	2	A	1) Single pulse, PW = 100 ms.
Total Power Dissipation	Ptot	0.5	W	2) When mounted on a 40 X 40 X 0.7 mm ceramic board.
Junction Temperature	TJ	150	℃
Storage Temperature Range	TStg	-55 to +150	℃
Characteristics (at Ta = 25 ℃)
DC Current Gain at VCE = 3 V, IC = 100 mA (Group P)	hFE	82 - 180	-
DC Current Gain at VCE = 3 V, IC = 100 mA (Group Q)	hFE	120 - 270	-
DC Current Gain at VCE = 3 V, IC = 100 mA (Group R)	hFE	180 - 390	-
Collector Base Breakdown Voltage at IC = 50 µA	V(BR)CBO	40	V
Collector Emitter Breakdown Voltage at IC = 1 mA	V(BR)CEO	32	V
Emitter Base Breakdown Voltage at IE = 50 µA	V(BR)EBO	5	V
Collector Cutoff Current at VCB = 20 V	ICBO	-	0.5	µA
Emitter Cutoff Current at VEB = 4 V	IEBO	-	0.5	µA
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VCE(sat)	-	0.4	V
Transition Frequency at -IE = 50 mA, VCE = 5 V, f = 100 MHz	fT	-	150	MHz
Output Capacitance at VCB = 10 V, f = 1 MHz	Cob	-	15	pF