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Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification

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Product Description

Product Overview

This NPN transistor is designed for general-purpose amplification and offers high DC current gain. It is complementary to the 2SA1611 and is suitable for high voltage applications. Key features include high voltage ratings and a wide DC current gain range, with specific hFE ranks available for tailored performance.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Product Type: Plastic-Encapsulated Transistors
  • Complementary to: 2SA1611
  • Marking: L4, L5, L6, L7

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 100 mA
Collector Power Dissipation PC (Ta=25 unless otherwise noted) 150 mW
Thermal Resistance From Junction To Ambient RJA 833 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 100 nA
Emitter cut-off current IEBO VEB=5V, IC=0 100 nA
DC current gain hFE* VCE=6V, IC=1mA 90 600
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Base-emitter voltage VBE VCE=6V, IC=1mA 0.55 0.65 V
Transition frequency fT VCE=6V, IC=10mA 250 MHz
Collector output capacitance Cob VCB=6V, IE=0, f=1MHz 3 pF

hFE Rank Classification

Rank Range
L4 90180
L5 135270
L6 200400
L7 300600

Package Information

Package Type Pinout
SOT-323 1. BASE, 2. EMITTER, 3. COLLECTOR

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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