Plastic Encapsulated Dual Transistor Package Featuring CBI BC846PN NPN and PNP Transistors in SOT363

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This product is a plastic-encapsulated dual transistor package containing isolated NPN and PNP transistors. It is designed for electronic applications requiring complementary transistor functions within a single component. The device features epitaxial die construction and is supplied in a SOT-363 package.

Product Attributes

Brand: CJ-elec (implied by website reference)
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-363
Model Designation: BC846PN/TR1 (NPN+PNP Dual Transistor)

Technical Specifications

General Specifications

Parameter	Symbol	Value	Units
Collector-Base Voltage	VCBO	80	V
Collector-Emitter Voltage	VCEO	65	V
Emitter-Base Voltage	VEBO	6	V
Collector Current Continuous	IC	0.1	A
Collector Power Dissipation	PC	200	mW
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55-150

NPN Transistor (TR1) Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=10A, IE=0	80			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=10mA, IB=0	65			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=1A, IC=0			6	V
Collector Cut-off Current	ICBO	VCB=30V, IE=0			15	nA
Emitter Cut-off Current	IEBO	VEB=5V, IC=0			15	nA
DC Current Gain	hFE	VCE=5V, IC=2mA	200		450
Collector-Emitter Saturation Voltage	VCE(sat)	IC=10mA, IB=0.5mA			0.25	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB=5mA			0.6	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=10mA, IB=0.5mA			0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB=5mA			0.9	V
Base-Emitter Voltage	VBE(on)	VCE=5V, IC=2mA	0.58	0.7		V
Base-Emitter Voltage	VBE(on)	VCE=5V, IC=10mA	0.72			V
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz			6.0	pF
Transition Frequency	fT	VCE=5V, IC=10mA, f=100MHz		100		MHz
Noise Figure	NF	VCE=5V, Ic=0.2mA, f=1kHz, Rg=2K, f=200Hz			10	dB

PNP Transistor (TR2) Characteristics

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-10A, IE=0	-80			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-10mA, IB=0	-65			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-1A, IC=0			-5	V
Collector Cut-off Current	ICBO	VCB=-30V, IE=0			-15	nA
Emitter Cut-off Current	IEBO	VEB=-5V, IC=0			-15	nA
DC Current Gain	hFE1	VCE=-5V, IC=-2mA	220		475
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-10mA, IB=-0.5mA			-0.3	V
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-100mA, IB=-5mA			-0.65	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-10mA, IB=-0.5mA			-0.7	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-100mA, IB=-5mA			-0.95	V
Base-Emitter Voltage	VBE(on)	VCE=-5V, IC=-2mA	-0.6	-0.75		V
Base-Emitter Voltage	VBE(on)	VCE=-5V, IC=-10mA	-0.82			V
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1MHz			4.5	pF
Transition Frequency	fT	VCE=-5V, IC=-10mA, f=100MHz		100		MHz
Noise Figure	NF	VCE=-5V, Ic=-0.2mA, f=1kHz, Rg=2K, f=200Hz			10	dB

PNP Transistor (TR2) General Specifications

Parameter	Symbol	Value	Units
Collector-Base Voltage	VCBO	-80	V
Collector-Emitter Voltage	VCEO	-65	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current Continuous	IC	-0.1	A
Collector Power Dissipation	PC*	200	mW
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55-150