Microwave Application NPN Transistor CBI MMBTSC3356-7G in SOT23 Plastic Package for VHF UHF CATV Bands

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three gain groups (Q, R, S) for tailored performance. The transistor features a SOT-23 plastic package, making it suitable for surface-mounted applications.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-23 Plastic Package
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Marking: Q (R23), R (R24), S (R25)

Technical Specifications

Parameter	Symbol	Group Q	Group R	Group S	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	20			V
Collector Emitter Voltage	VCEO	12			V
Emitter Base Voltage	VEBO	3			V
Collector Current	IC	100			mA
Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			C
Storage Temperature Range	Ts	-65 to +150			C
Characteristics (Ta = 25 C)
DC Current Gain at VCE = 10 V, IC = 20 mA	hFE	50	80	125	-
Collector Cutoff Current at VCB = 10 V	ICBO	-			1	A
Emitter Cutoff Current at VEB = 1 V	IEBO	-			1	A
Gain Bandwidth Product at VCE = 10 V, IC = 20 mA	fT	7			-	GHz
Feed-Back Capacitance at VCB = 10 V, f = 1 MHz	Cre ¹⁾	0.55			1	pF
Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz	NF	1.1			2	dB