Low Forward Voltage Silicon RF Switching Diode CBI BA592WS in Compact SOD 323 Package for Band Switching Applications
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Product Description
Product Overview
This SILICON RF SWITCHING DIODE, identified by the marking code "W4", is designed for band switching applications in TV/VTR tuners and mobile devices. It features very low forward resistance and small capacitance, making it suitable for high-frequency operations. The diode is housed in a compact SOD-323 package.
Product Attributes
- Marking Code: W4
- Package Type: SOD-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Diode Reverse Voltage | VR | - | - | 35 | V | - |
| Forward Current | IF | - | - | 100 | mA | - |
| Junction Temperature | TJ | - | - | 150 | C | - |
| Operating Temperature Range | Top | -55 | - | 125 | C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | C | - |
| Reverse Current | IR | - | - | 20 | nA | VR = 20 V |
| Forward Voltage | VF | - | - | 1 | V | IF = 100 mA |
| Diode Capacitance | CT | - | 0.65 | 1.4 | pF | VR = 1 V, f = 1 MHz |
| Diode Capacitance | CT | - | 0.6 | 1.1 | pF | VR = 3 V, f = 1 MHz |
| Reverse Parallel Resistance | RP | - | 100 | - | K | VR = 0 V, f = 100 MHz |
| Forward Resistance | rf | - | - | 0.7 | IF = 3 mA, f = 100 MHz | |
| Forward Resistance | rf | - | - | 0.5 | IF = 10 mA, f = 100 MHz | |
| Series Inductance | Ls | - | 1.8 | - | nH | - |
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | - | 0.95 | 1.15 |
| A1 | - | 0.010 | 0.100 |
| B | - | 1.20 | 1.40 |
| bp | - | 0.25 | 0.40 |
| C | - | 0.09 | 0.150 |
| E | - | 1.60 | 1.80 |
| HE | - | 2.30 | 2.70 |
| Lp | - | 0.20 | 0.40 |
| - | 0 | 5 |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
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Contact Person
Sellina