General purpose PNP bipolar transistor CBI MMBTA56 suitable for amplifier applications in SOT23 package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This is a general-purpose PNP bipolar transistor designed for amplifier applications. It is available in a SOT-23 plastic package. On special request, different pin configurations can be manufactured.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Pin Configuration: 1. Base, 2. Emitter, 3. Collector

Technical Specifications

Absolute Maximum Ratings (Ta = 25 C)

Symbol	Value	Unit	Description
-VCBO	80	V	Collector Base Voltage
-VCEO	80	V	Collector Emitter Voltage
-VEBO	4	V	Emitter Base Voltage
-IC	500	mA	Collector Current
Ptot	200	mW	Total Device Dissipation
	2.8	mW/C	Derate above 25C
RJA	357	C/W	Thermal Resistance, Junction to Ambient
Tj	-55 to +150	C	Junction Temperature
TS	-55 to +150	C	Storage Temperature Range

Characteristics (at Tamb = 25 C)

Symbol	Min.	Max.	Unit	Description
hFE	100	-		DC Current Gain at -IC=10mA, -VCE=1V
hFE	100	-		DC Current Gain at -IC=100mA, -VCE=1V
-ICBO	-	0.1	A	Collector Cutoff Current at -VCB=80V
-ICEO	-	0.1	A	Collector Cutoff Current at -VCE=60V
-V(BR)CEO	80	-	V	Collector Emitter Breakdown Voltage at -IC=1mA
-V(BR)CBO	80	-	V	Collector Base Breakdown Voltage at -IC=100A
-V(BR)EBO	4	-	V	Emitter Base Breakdown Voltage at -IE=100A
-VCE(sat)	-	0.25	V	Collector Emitter Saturation Voltage at -IC=100mA, -IB=10mA
-VBE(on)	-	1.2	V	Base Emitter On Voltage at -IC=100mA, -VCE=1V
fT	50	-	MHz	Current Gain Bandwidth Product at -IC=100mA, -VCE=1V, f=100MHz