Electronic Design Transistor CBI MMBTSC4081W NPN Silicon Epitaxial Planar with Robust Maximum Ratings

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for various electronic applications. It is subdivided into three groups (Q, R, and S) based on its DC current gain, offering flexibility for different circuit requirements. With robust absolute maximum ratings and key electrical characteristics detailed, this transistor provides reliable performance for demanding electronic designs.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Group	Min.	Typ.	Max.	Unit	Conditions
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO				60	V
Collector Emitter Voltage	VCEO				50	V
Emitter Base Voltage	VEBO				7	V
Collector Current	IC				150	mA
Power Dissipation	Ptot				200	mW
Junction Temperature	Tj				150	C
Storage Temperature Range	Tstg		-55		150	C
Characteristics (Ta = 25 C)
DC Current Gain	hFE	Q	120	180	270	-	VCE = 6 V, IC = 1 mA
DC Current Gain	hFE	R	270	390	560	-	VCE = 6 V, IC = 1 mA
DC Current Gain	hFE	S	-	-	-	-	VCE = 6 V, IC = 1 mA
Collector Base Cutoff Current	ICBO		-	-	0.1	A	VCB = 60 V
Emitter Base Cutoff Current	IEBO		-	-	0.1	A	VEB = 7 V
Collector Base Breakdown Voltage	V(BR)CBO		60	-	-	V	IC = 50 A
Collector Emitter Breakdown Voltage	V(BR)CEO		50	-	-	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO		7	-	-	V	IE = 50 A
Collector Emitter Saturation Voltage	VCE(sat)		-	-	0.4	V	IC = 50 mA, IB = 5 mA
Transition Frequency	fT		-	180	-	MHz	VCE = 12 V, -IE = 2 mA, f = 100 MHz
Collector Output Capacitance	Cob		-	2	3.5	pF	VCB = 12 V, f = 1 MHz