NPN Silicon Epitaxial Planar Transistor CBI MMUN2231 Designed for Switching and Interface Circuit

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package: SOT-23 Plastic Package

Technical Specifications

Model	R1 (Input) (K)	R2 (Collector) (K)	Marking	VCEsat (V) at IC=10mA, IB=0.3mA	VCEsat (V) at IC=10mA, IB=5mA	VCEsat (V) at IC=10mA, IB=1mA	hFE at VCE=10V, IC=5mA (Min.)	IEBO (mA) at VEB=6V (Max.)	VOL (V) at VCC=5V, RL=1K	VOH (V) at VCC=5V, RL=1K	R1 (K)	R1/R2
MMUN2211	10	10	A8B	-	-	-	35	0.5	0.2	4.9	7	0.8
MMUN2212	22	22	A8A	-	-	-	60	0.2	0.2	4.9	15.4	0.17
MMUN2213	47	47	A8C	-	-	-	80	0.1	-	-	32.9	0.25
MMUN2214	10	47	A8D	-	-	-	80	0.2	0.2	4.9	7	0.17
MMUN2215	10		A8E	0.25	-	-	160	0.9	0.2	4.9	7	0.8
MMUN2216	4.7		A8F	0.25	-	-	160	1.9	0.2	4.9	3.3	0.055
MMUN2230	1	1	A8G	0.25	0.25	-	3	4.3	0.2	4.9	0.7	1.2
MMUN2231	2.2	2.2	A8H	0.25	0.25	-	8	2.3	0.2	4.9	1.5	0.25
MMUN2232	4.7	4.7	A8J	0.25	0.25	-	15	1.5	0.2	4.9	3.3	0.185
MMUN2233	4.7	47	A8K	0.25	0.25	-	80	0.18	0.2	4.9	3.3	0.056
MMUN2234	22	47	A8L	0.25	0.25	-	80	0.13	0.2	4.9	15.4	0.38
MMUN2235	2.2	47	A8M	0.25	0.25	-	80	0.2	0.2	4.9	1.54	0.038
MMUN2238	2.2		A8R	0.25	-	-	160	4	0.2	4.9	1.54	0.055
MMUN2241	100		A8U	-	-	-	160	0.1	0.2	-	70	-

Absolute Maximum Ratings (Ta = 25 C)	Symbol	Value	Unit
Collector Base Voltage	VCBO	50	V
Collector Emitter Voltage	VCEO	50	V
Collector Current	IC	100	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-55 to +150	C

Characteristics (Ta = 25 C)	Symbol	Value	Unit
Collector Base Breakdown Voltage (at IC = 10 A)	V(BR)CBO	50	V
Collector Emitter Breakdown Voltage (at IC = 2 mA)	V(BR)CEO	50	V
Collector Base Cutoff Current (at VCB = 50 V)	ICBO	-100	nA
Collector Emitter Cutoff Current (at VCE = 50 V)	ICEO	-500	nA