PNP Plastic Encapsulated Transistor CBI BC857BW Ideal for Switching and AF Amplifier Applications

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Product Description

Product Overview

These PNP plastic-encapsulated transistors are ideally suited for automatic insertion and are designed for switching and AF amplifier applications. They offer reliable performance in various electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material: Plastic-Encapsulate
Type: Transistor (PNP)
Package Type: SOT-323

Technical Specifications

Model	Parameter	Value	Unit	Test Conditions
BC856W	Collector-Base Voltage (VCBO)	-80	V	IC= -10A, IE=0
	Collector-Emitter Voltage (VCEO)	-65	V	IC= -10mA, IB=0
	Device Marking	3A
BC857W	Collector-Base Voltage (VCBO)	-50	V	IC= -10A, IE=0
	Collector-Emitter Voltage (VCEO)	-45	V	IC= -10mA, IB=0
	Device Marking	3E (AW), 3F (BW), 3G (CW)
BC858W	Collector-Base Voltage (VCBO)	-30	V	IC= -10A, IE=0
	Collector-Emitter Voltage (VCEO)	-30	V	IC= -10mA, IB=0
	Device Marking	3J (AW), 3K (BW), 3L (CW)
Emitter-Base Voltage (VEBO)		-5	V	IE= -1A, IC=0
Collector Current Continuous (IC)		-0.1	A
Collector Power Dissipation (PC*)		150	mW	(Ta=25)
Junction Temperature (TJ)		150
Storage Temperature (Tstg)		-65-150
BC856AW, 857AW,858AW	DC current gain (hFE)	125		VCE= -5V, IC= -2mA
		250
		420
BC856BW, 857BW,858BW	DC current gain (hFE)	220		VCE= -5V, IC= -2mA
		475
		800
BC857CW,BC858CW	DC current gain (hFE)			VCE= -5V, IC= -2mA
Collector-emitter saturation voltage (VCE(sat))		-0.65	V	IC=-100mA, IB= -5mA
Base-emitter saturation voltage (VBE(sat))		-1.1	V	IC= -100mA, IB= -5mA
Transition frequency (fT)		100	MHz	VCE= -5V, IC= -10mA, f=100MHz
Collector capacitance (Cob)		4.5	pF	VCB=-10V, f=1MHz
Collector cut-off current (ICBO)		-15	nA	VCB= -30 V , IE=0