SOT23 Package PNP Silicon Epitaxial Planar Transistors CBI MMUN2112 for Drive and Interface Circuits

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Product Description

Product Overview

PNP Silicon Epitaxial Planar Transistors designed for switching and interface circuit applications, as well as drive circuit applications. These transistors are housed in a SOT-23 plastic package and feature integrated base and emitter resistors.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Transistor Type: PNP Silicon Epitaxial Planar

Technical Specifications

Model	Base Resistor R1 (K)	Emitter Resistor R2 (K)	Marking	DC Current Gain (hFE) (-VCE = 10 V, -IC = 5 mA) Min.	Collector Base Cutoff Current (ICBO) (-VCB = 50 V) Max.	Collector Emitter Cutoff Current (ICEO) (-VCE = 50 V) Max.	Emitter Base Cutoff Current (IEBO) (-VEB = 6 V) Max.	Collector Base Breakdown Voltage (V(BR)CBO) (-IC = 10 A) Min.	Collector Emitter Breakdown Voltage (V(BR)CEO) (-IC = 2 mA) Min.	Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 0.3 mA) Max.	Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 5 mA) Max.	Collector Emitter Saturation Voltage (VCEsat) (-IC = 10 mA, -IB = 1 mA) Max.	Output Voltage (on) (VCC = 5 V, VB = 2.5 V, RL = 1 K) Max.	Output Voltage (on) (VCC = 5 V, VB = 3.5 V, RL = 1 K) Max.	Output Voltage (off) (VCC = 5 V, VB = 0.5 V, RL = 1 K) Min.	Output Voltage (off) (VCC = 5 V, VB = 0.05 V, RL = 1 K) Min.	Output Voltage (off) (VCC = 5 V, VB = 0.25 V, RL = 1 K) Min.	Input Resistor R1 (K)	Resistor Ratio R1/R2
MMUN2111	10	10	A6A	35	-100 nA	-500 nA	-0.5 mA	-50 V	-50 V	-0.25 V	-	-	-0.2 V	-	-	-	-	7	0.8
MMUN2112	22	22	A6B	60	-100 nA	-500 nA	-0.2 mA	-50 V	-50 V	-0.25 V	-	-	-0.2 V	-	-	-	-	15.4	0.8
MMUN2113	47	47	A6C	80	-100 nA	-500 nA	-0.1 mA	-50 V	-50 V	-	-	-	-	-0.2 V	-	-	-	32.9	0.8
MMUN2114	10	47	A6D	80	-100 nA	-500 nA	-0.2 mA	-50 V	-50 V	-0.25 V	-	-	-0.2 V	-	-	-	-	7	0.17
MMUN2115	10		A6E	160	-100 nA	-500 nA	-0.9 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-4.9 V	-	7	-
MMUN2116	4.7		A6F	160	-100 nA	-500 nA	-1.9 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-4.9 V	-	3.3	-
MMUN2130	1	1	A6G	3	-100 nA	-500 nA	-4.3 mA	-50 V	-50 V	-0.25 V	-	-	-0.2 V	-	-4.9 V	-	-	0.7	1.2
MMUN2131	2.2	2.2	A6J	8	-100 nA	-500 nA	-2.3 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-4.9 V	-	1.5	1.2
MMUN2132	4.7	4.7	A6H	15	-100 nA	-500 nA	-1.5 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-4.9 V	-	3.3	1.2
MMUN2133	4.7	47	A6K	80	-100 nA	-500 nA	-0.18 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-	-	3.3	0.17
MMUN2134	22	47	A6L	80	-100 nA	-500 nA	-0.13 mA	-50 V	-50 V	-	-0.25 V	-	-0.2 V	-	-	-	-	15.4	0.25

Absolute Maximum Ratings (Ta = 25 C)	Symbol	Value	Unit
Collector Base Voltage	-VCBO	50	V
Collector Emitter Voltage	-VCEO	50	V
Collector Current	-IC	100	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-55 to +150	C