High Gain NPN Transistor CBI 2SC1623 with Plastic Surface Mount Package and 50 Volt Breakdown Voltage

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 2SC1623 is an NPN transistor featuring high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V). It is designed for applications requiring efficient amplification and switching.

Product Attributes

Marking: L6
Package Type: SOT-23
Package Outline: Plastic surface mounted package; 3 leads

Technical Specifications

Parameter	Symbol	Test Conditions	Typ	Max	Unit
Collector-Base breakdown voltage	V(BR)CBO	IC=100A, IE=0		60	V
Collector-Emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0		50	V
Emitter-Base breakdown voltage	V(BR)EBO	IE=100A, IC=0		5	V
Collector cut-off current	ICBO	VCB=60V, IE=0		0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1	A
DC current gain	hFE	VCE=6V, IC=1mA	200	400
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA		0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA		1	V
Transition frequency	fT	VCE=6V, IC=10mA		250	MHz

Parameter	Value	Units
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current -Continuous	IC	100	mA
Collector Power Dissipation	PC	200	mW
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55-150