PNP Silicon Epitaxial Transistor CBI BC856B SOT23 Package Suitable for Switching Amplifier Circuits

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Product Description

Product Overview

The BC856...BC860 series are PNP silicon epitaxial transistors designed for switching and amplifier applications. These transistors are housed in a compact SOT-23 plastic package, making them suitable for various electronic circuits where space efficiency is crucial.

Product Attributes

Package Type: SOT-23 Plastic Package
Transistor Type: PNP Silicon Epitaxial
Applications: Switching and Amplifier

Technical Specifications

Parameter	Symbol	BC856	BC857, BC860	BC858, BC859	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	-VCBO	80	50	30	V
Collector Emitter Voltage	-VCEO	65	45	30	V
Emitter Base Voltage	-VEBO	5			V
Collector Current	-IC	100			mA
Peak Collector Current	-ICM	200			mA
Power Dissipation	Ptot	200			mW
Junction Temperature	Tj	150			C
Storage Temperature Range	Tstg	-65 to +150			C
Characteristics (Ta = 25 C)
Collector Base Cutoff Current (-VCB = 30 V)	-ICBO	-			15	nA
Collector Emitter Saturation Voltage (-IC = 10 mA, -IB = 0.5 mA)	-VCE(sat)	-			0.3	V
Collector Emitter Saturation Voltage (-IC = 100 mA, -IB = 5 mA)	-VCE(sat)	-			0.65	V
Base Emitter On Voltage (-IC = 2 mA, -VCE = 5 V)	-VBE(on)	0.6			-	V
Base Emitter On Voltage (-IC = 10 mA, -VCE = 5 V)	-VBE(on)	-			0.82	V
Current Gain Bandwidth Product (-VCE = 5 V, -IC = 10 mA, f = 100 MHz)	fT	100			-	MHz
Output Capacitance (-VCB = 10 V, f = 1 MHz)	Cob	-			6	pF
Noise Figure (BC859, RG = 2 K, f = 30 ~15 KHz)	NF	-		2	dB
Noise Figure (BC856, BC857, BC858, RG = 2 K, f = 1 KHz)	NF	-		4	dB
Noise Figure (BC859, BC860, RG = 2 K, f = 1 KHz)	NF	-		4	dB
DC Current Gain (at -VCE = 5 V, -IC = 2 mA)
Current Gain Group	hFE	Min.	Max.	Min.	Max.	Unit
A	hFE	110	220	-	-	-
B	hFE	130	280	-	-	-
C	hFE	180	450	-	-	-
D	hFE	220	450	-	-	-
E	hFE	300	800	-	-	-
F	hFE	400	1000	-	-	-
Breakdown Voltages (at specified conditions)
Collector Base Breakdown Voltage (-IC = 10 A)	-V(BR)CBO	80	50	30	-	V
Collector Emitter Breakdown Voltage (-IC = 10 A)	-V(BR)CES	80	50	30	-	V
Collector Emitter Breakdown Voltage (-IC = 10 mA)	-V(BR)CEO	65	45	30	-	V
Emitter Base Breakdown Voltage (-IE = 1 A)	-V(BR)EBO	5			-	V