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Built in Bias Resistors NPN Transistor CBI MMBTRC106SS for Drive Circuits and Switching Applications

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and interface circuit applications, as well as drive circuits. Featuring built-in bias resistors, these transistors simplify circuit design and reduce the quantity of parts and manufacturing processes required. They are housed in a SOT-23 plastic package.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Package Type: SOT-23 Plastic Package

Technical Specifications

Parameter Symbol MMBTRC101SS MMBTRC102SS MMBTRC103SS MMBTRC104SS MMBTRC105SS MMBTRC106SS Unit
Absolute Maximum Ratings (Ta = 25 C)
Output Voltage VO 50 50 50 50 12 20 V
Input Voltage VI 20, -10 30, -10 40, -10 40, -10 12, -5 20, -5 V
Output Current IO 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range Tstg -55 to +150 C
Resistor Values
Base R1 (Input) NA NB NC ND NF NE
R2 (Emitter Common) 4.7 10 22 47 47 47 k
Characteristics (Ta = 25 C)
DC Current Gain GI 30 50 70 80 80 80 -
(at VO = 5 V, IO = 10 mA)
Output Cutoff Current IO(OFF) 500 nA
(at VO = 50 V)
Input Current II 1.8 0.88 0.36 0.18 3.6 1.8 mA
(at VI = 5 V)
Output Voltage VO(ON) 0.3 V
(at IO = 10 mA, II = 0.5 mA)
Input Voltage (ON) VI(ON) 2 2.4 3 5 1.1 1.3 V
(at VO = 0.2 V, IO = 5 mA)
Input Voltage (OFF) VI(OFF) 1 1 1 1 0.5 0.5 V
(at VO = 5 V, IO = 0.1 mA)
Transition Frequency fT 1) 200 MHz
(at VO = 10 V, IO = 5 mA)
1) Characteristic of transistor only.

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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