NPN Silicon Epitaxial Planar Transistor CBI MMBT2907AW for Switching Amplifier Applications

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching and amplifier applications. It serves as a complementary component to the MMBT2907AW and is available in a small package. The transistor is suitable for various electronic circuits requiring reliable switching and amplification capabilities.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Type: NPN Silicon Epitaxial Planar Transistor
Marking: K3P/1P

Technical Specifications

Parameter	Symbol	MMBT2222W	MMBT2222AW	Unit
Absolute Maximum Ratings (Ta = 25 C)
Collector Base Voltage	VCBO	60	75	V
Collector Emitter Voltage	VCEO	30	40	V
Emitter Base Voltage	VEBO	5	6	V
Collector Current	IC	600		mA
Power Dissipation	Ptot	150		mW
Junction Temperature	Tj	150		C
Storage Temperature Range	Tstg	-55 to +150		C
Characteristics at Ta = 25 C
DC Current Gain at VCE = 10 V, IC = 0.1 mA	hFE	35	-	-
DC Current Gain at VCE = 10 V, IC = 1 mA	hFE	50	-	-
DC Current Gain at VCE = 10 V, IC = 10 mA	hFE	75	-	-
DC Current Gain at VCE = 1 V, IC = 150 mA	hFE	50	-	-
DC Current Gain at VCE = 10 V, IC = 150 mA	hFE	100	300	-
DC Current Gain at VCE = 10 V, IC = 500 mA	hFE	30	-	-
DC Current Gain at VCE = 10 V, IC = 500 mA	hFE	40	-	-
Collector Base Cutoff Current at VCB = 50 V	ICBO	-	100	nA
Collector Base Cutoff Current at VCB = 60 V	ICBO	-	100	nA
Emitter Base Cutoff Current at VEB = 3 V	IEBO	-	100	nA
Collector Base Breakdown Voltage at IC = 10 A	V(BR)CBO	60	75	V
Collector Emitter Breakdown Voltage at IC = 10 mA	V(BR)CEO	30	40	V
Emitter Base Breakdown Voltage at IE = 10 A	V(BR)EBO	5	6	V
Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA	VCE(sat)	-	0.4	V
Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VCE(sat)	-	1.6	V
Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA	VBE(sat)	-	0.6	V
Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA	VBE(sat)	-	2.6	V
Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz	fT	300	-	MHz
Collector Output Capacitance at VCB = 10 V, f = 100 KHz	Cob	-	8	pF
Delay Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	td	-	10	ns
Rise Time at VCC = 30 V, VBE(OFF) = 0.5 V, IC = 150 mA, IB1 = 15 mA	tr	-	25	ns
Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	tstg	-	225	ns
Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA	tf	-	60	ns