SOT23 Package PNP Silicon Transistor CBI MMBT2907A for Switching and AF Amplifier Electronic Circuit

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Product Description

Product Overview

The MMBT2907 / MMBT2907A is a PNP silicon epitaxial planar transistor designed for switching and AF amplifier applications. This transistor is categorized into groups based on its DC current gain. It is housed in a SOT-23 plastic package.

Product Attributes

Package Type: SOT-23 Plastic
Transistor Type: PNP Silicon Epitaxial Planar
Application: Switching and AF amplifier

Technical Specifications

Parameter	Symbol	MMBT2907	MMBT2907A	Unit
Absolute Maximum Ratings (Ta = 25 °C)
Collector Base Voltage	-VCBO	60	60	V
Collector Emitter Voltage	-VCEO	40	60	V
Emitter Base Voltage	-VEBO	5	5	V
Collector Current	-IC	600	600	mA
Power Dissipation	Ptot	350	350	mW
Junction Temperature	Tj	150	150	°C
Storage Temperature Range	Tstg	-55 to +150	-55 to +150	°C
Characteristics (Ta = 25 °C)
DC Current Gain	hFE	35-300	50-300	-
Collector Base Cutoff Current	-ICBO	-	20	nA
Collector Base Breakdown Voltage	-V(BR)CBO	60	60	V
Collector Emitter Breakdown Voltage	-V(BR)CEO	40	60	V
Emitter Base Breakdown Voltage	-V(BR)EBO	5	5	V
Collector Saturation Voltage	-VCE(sat)	0.4	1.6	V
Base Saturation Voltage	-VBE(sat)	1.3	2.6	V
Gain Bandwidth Product	fT	200	200	MHz
Collector Output Capacitance	Cob	8	8	pF
Turn-on Time	ton	45	45	ns
Delay Time	td	10	10	ns
Rise Time	tr	40	40	ns
Turn-off Time	toff	100	100	ns
Storage Time	ts	80	80	ns
Fall Time	tf	30	30	ns