High Voltage NPN Silicon Transistor CBI MMBT13001 in SOT23 Package for Amplification and Switching

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for general-purpose applications. It features a SOT-23 plastic package, making it suitable for surface mounting. The transistor offers robust performance with high breakdown voltages and controlled current gain, ideal for switching and amplification circuits in various electronic devices.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Package: SOT-23 Plastic Package
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector Base Voltage	VCBO	700	V
Collector Emitter Voltage	VCEO	420	V
Emitter Base Voltage	VEBO	10	V
Collector Current	IC	150	mA
Power Dissipation	Ptot	300	mW	(Ta = 25 C)
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
DC Current Gain	hFE	15	-	VCE = 20 V, IC = 10 mA
DC Current Gain	hFE	25	-	VCE = 20 V, IC = 10 mA
Collector Base Cutoff Current	ICBO	-	100 A	VCB = 700 V
Collector Emitter Cutoff Current	ICEO	-	100 A	VCE = 420 V
Emitter Base Cutoff Current	IEBO	-	100 A	VEB = 10 V
Collector Base Breakdown Voltage	V(BR)CBO	700	V	IC = 100 A
Collector Emitter Breakdown Voltage	V(BR)CEO	420	V	IC = 1 mA
Emitter Base Breakdown Voltage	V(BR)EBO	10	V	IE = 100 A
Collector Emitter Saturation Voltage	VCE(sat)	-	1.05 V	IC = 50 mA, IB = 10 mA
Base Emitter Saturation Voltage	VBE(sat)	-	1.55 V	IC = 50 mA, IB = 10 mA
Transition Frequency	fT	5	MHz	VCE = 10 V, IC = 50 mA, f = 1 MHz
Storage Time	ts	-	3 s	UI9600, IC = 100 mA
Rise Time	tr	-	1 s	UI9600, IC = 100 mA
Fall Time	tf	-	1 s	UI9600, IC = 100 mA