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General purpose low frequency power amplifier transistor CBI 2SD669U plastic encapsulated package type

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

This is a low-frequency power amplifier, offered as a complementary pair with the 2SB649. It is designed for general-purpose amplification applications. The transistor is housed in a plastic-encapsulated package.

Product Attributes

  • Complementary Pair with 2SB649
  • Marking: D669
  • Package Type: Plastic-Encapsulated Transistor
  • Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1.5 A
Collector Dissipation PC 0.75 W
Thermal Resistance from Junction to Ambient RJA 167 /W
Junction Temperature TJ 150
Storage Temperature Tstg -55 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 180 V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 160 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=160V, IE=0 10 A
DC current gain hFE(1) VCE=5V, IC=150mA 60 320
DC current gain hFE(2) VCE=5V, IC=500mA 30
Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=50mA 1 V
Base-emitter voltage VBE VCE=5V, IC=150mA 1.5 V
Transition frequency fT VCE=5V, IC=150mA 140 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 14 pF
hFE(1) Rank Range
B 60-120
C 100-200
D 160-320
Symbol Dimension in Millimeters Min Max
A 1.40 1.60
B 2.95 3.05
b1 1.45 1.70
b2 0.45 0.56
b3 0.35 0.50
C 0.35 0.50
D 4.40 4.60
E 2.35 2.55
HE 3.90 4.40
Lp 0.90 1.10

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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