CBI S8050 0.8A NPN transistor with 0.8A continuous collector current and compact SOT23 surface mount

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Product Description

Product Overview

This NPN transistor is designed for general-purpose applications and is complementary to the S8550. It offers a continuous collector current of 0.8A and a collector dissipation of 0.3W. The device is housed in a plastic surface-mounted SOT-23 package.

Product Attributes

Marking: J3Y
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	Units
Collector-Base Voltage	VCBO				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current - Continuous	IC				0.8	A
Collector Dissipation	PC	(TA=25)			0.3	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40 V, IE=0			0.1	A
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain	HFE(1)	VCE=1V, IC= 50mA	200		350
DC current gain	HFE(2)	VCE=1V, IC= 500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA, f=30MHz		150		MHz