Switching Transistor CBI MMBT4403 PNP Type with Stable Electrical Parameters and SOT23 Package

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Product Description

Product Overview

This PNP transistor is designed for switching applications. It offers reliable performance with key electrical characteristics such as breakdown voltages and DC current gain. The device is housed in a compact SOT-23 package, making it suitable for surface mounting in various electronic circuits.

Product Attributes

Marking: 2T
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 (Plastic surface mounted package; 3 leads)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-40	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-0.6	A
Collector Power Dissipation	PC			0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-100A , IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA , IB=0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-35V, IE=0		-0.1	A
Collector cut-off current	ICEO	VCE=-35 V, IB=0		-0.1	A
Emitter cut-off current	IEBO	VEB=-4V,IC=0		-0.1	A
DC current gain	hFE	VCE=-2V, IC= -150mA	100	300
Collector-emitter saturation voltage	VCE(sat)	IC=-150mA, IB=-15mA		-0.4	V
Base-emitter saturation voltage	VBE(sat)	IC=- 150mA, IB=-15mA		-0.95	V
Transition frequency	fT	VCE= -10V, IC= -20mA f = 100MHz		200	MHz