Digital Transistor CBI DTC143ZE NPN Silicon Epitaxial Planar Featuring Integrated Bias Resistors for Circuit Design
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Product Description
Product Overview
The MMDTC143ZE is an NPN Silicon Epitaxial Planar Digital Transistor designed to simplify circuit design and reduce part count and manufacturing processes through its built-in bias resistors. It features integrated resistors for input (R2) and collector (R1), with the emitter being common. This configuration is ideal for applications requiring simplified digital transistor circuitry.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Type: Digital Transistor
- Configuration: NPN
- Built-in Components: Bias resistors (R1, R2)
- Marking: E23
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Collector Emitter Voltage | VCEO | - | - | 50 | V |
| Input Voltage | VI | - | -5 to +30 | - | V |
| Collector Current | IC | - | - | 100 | mA |
| Power Dissipation | Ptot | - | - | 150 | mW |
| Junction Temperature | Tj | - | - | 150 | C |
| Storage Temperature Range | Tstg | -55 | - | +150 | C |
| Characteristics at Ta = 25 C | |||||
| DC Current Gain | hFE | 80 | - | - | - |
| Collector Base Cutoff Current | ICBO | - | - | 0.5 | A |
| Emitter Base Cutoff Current | IEBO | - | - | 1.8 | mA |
| Collector Emitter Saturation Voltage | VCE(sat) | - | - | 0.3 | V |
| Input on Voltage | VI(on) | - | - | 1.3 | V |
| Input off Voltage | VI(off) | 0.5 | - | - | V |
| Transition Frequency | fT | - | 250 | - | MHz |
| Input Resistance (R1) | R1 | 3.29 | 4.7 | 6.11 | K |
| Resistance Ratio (R2 / R1) | - | 8 | 10 | 12 | - |
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