NPN transistor with high voltage capability CBI 2SC1623W featuring 50V VCEO and 200 DC current gain

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Product Description

Product Overview

The 2SC1623W is an NPN transistor featuring high DC current gain (hFE=200 Typ) at VCE=6V, IC=1mA and high voltage capability with a VCEO of 50V. This transistor is housed in a plastic surface-mounted SOT-323 package with 3 leads.

Product Attributes

Type: NPN Transistor
Marking: L6
Package: SOT-323

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Units
Collector-Base Voltage	VCBO		60	V
Collector-Emitter Voltage	VCEO		50	V
Emitter-Base Voltage	VEBO		5	V
Collector Current - Continuous	IC		100	mA
Collector Power Dissipation	PC	(TA=25)	200	mW
Junction Temperature	TJ		150
Storage Temperature	Tstg		-55-150
Collector-base breakdown voltage	V(BR)CBO	IC=100A, IE=0	60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5	V
Collector cut-off current	ICBO	VCB=60V, IE=0	0.1	A
Emitter cut-off current	IEBO	VEB=5V, IC=0	0.1	A
DC current gain	hFE	VCE=6V, IC=1mA	200-400
Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB=10mA	0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB=10mA	1	V
Transition frequency	fT	VCE=6V, IC=10mA	250	MHz