Dual digital transistor CBI UMH3N with integrated DTC143T chips providing interference free and operation

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Delivery Time: Negotiable

Product Description

Product Overview

This product features two independent DTC143T digital transistor chips integrated into a single package, offering dual digital transistor functionality (NPN+NPN). The independent nature of the transistor elements eliminates interference, leading to improved performance. This integrated design significantly reduces mounting costs and required board area by half. It is suitable for applications requiring compact and reliable digital transistor solutions.

Product Attributes

Type: Digital Transistors (Built-in Resistors), Dual Digital Transistors (NPN+NPN)
Marking: H3
Origin: Heyuan China Base Electronics Technology Co., Ltd.
Package: SOT-363

Technical Specifications

Parameter	Symbol	Value	Units	Conditions
Absolute Maximum Ratings (Ta=25)
Collector-base voltage	V(BR)CBO	50	V
Collector-emitter voltage	V(BR)CEO	50	V
Emitter-base voltage	V(BR)EBO	5	V
Collector current	IC	100	mA
Collector Power dissipation	PC	150	mW
Junction temperature	Tj	150
Storage temperature	Tstg	-55~150
Electrical Characteristics (Ta=25)
Collector-base breakdown voltage	V(BR)CBO	50	V	Ic=50A
Collector-emitter breakdown voltage	V(BR)CEO	50	V	Ic=1mA
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=50A
Collector cut-off current	ICBO	0.5	A	VCB=50V
Emitter cut-off current	IEBO	0.5	A	VEB=4V
Collector-emitter saturation voltage	VCE(sat)	0.3	V	IC=5mA, IB=0.25mA
DC current transfer ratio	hFE	100 ~ 600		VCE=5V, IC=1mA
Input resistance	R1	3.29 ~ 6.11	K	VCE=5V, Ta=100 / Ta=25
Transition frequency	fT	250	MHz	VCE=10V ,IE=-5mA,f=100MHz