Space dual transistor NPN NPN CBI BC846B in SOT 23 6L package for optimized electronic device design

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Product Description

Product Overview

The Heyuan China Base Electronics Technology Co., Ltd. SOT-23-6L dual transistor offers a compact NPN+NPN configuration, integrating two transistors into a single package. This design significantly reduces component count and board space, while ensuring no mutual interference between the transistors. Ideal for applications requiring space-saving and efficient component integration.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23-6L
Configuration: Dual Transistor (NPN+NPN)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				80	V
Collector-Emitter Voltage	VCEO				65	V
Emitter-Base Voltage	VEBO				6	V
Collector Current Continuous	IC				0.1	A
Collector Dissipation	PC				200	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=10A,IE=0	80			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=10mA,IB=0	65			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A,IC=0	6			V
Collector cut-off current	ICBO	VCB=70V,IE=0			100	nA
Emitter cut-off current	IEBO	IC=0, VEB=5V			100	nA
DC current gain	hFE	VCE=5V,IC=2mA	110	200	420
			220	450	800

Collector-emitter saturation voltage	VCE(sat)(1)	IC=10mA,IB=0.5mA		0.25		V
Collector-emitter saturation voltage	VCE(sat)(2)	IC=100mA,IB=5mA		0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=100mA,IB=5mA		1.1		V
Transition frequency	fT	VCB=5V,IE=10mA,f=100MHz			100	MHz
Collector output capacitance	Cob	VCB=10V,IE=0,f=1MHz			1.5	pF