Dual Bias Resistor Transistor MMUN5211DW NPN Silicon Surface Mount Device for Space Saving Circuits
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Product Description
Product Overview
The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing external bias components. This series is designed for low-power surface mount applications where board space is limited, offering advantages such as simplified circuit design, reduced board space, and decreased component count. The devices are compliant with RoHS requirements.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material Compliance: RoHS
- Package Type: SOT-363
Technical Specifications
| Model | Device Marking | R1 (K) | R2 (K) | Shipping | hFE (Min) | IEBO (Max) | R1 (K) (Resistor Value) | R1/R2 (Resistor Ratio) |
|---|---|---|---|---|---|---|---|---|
| MMUN5211DW | 7A | 10 | 10 | 3000/Tape&Reel | 35 | 0.5 mA | 7 | 0.8 |
| MMUN5212DW | 7B | 22 | 22 | 3000/Tape&Reel | 60 | 0.2 mA | 15.4 | 0.8 |
| MMUN5213DW | 7C | 47 | 47 | 3000/Tape&Reel | 80 | 0.1 mA | 32.9 | 0.17 |
| MMUN5214DW | 7D | 10 | 47 | 3000/Tape&Reel | 80 | 0.2 mA | 7 | 0.17 |
| MMUN5215DW | 7E | 10 | - | 3000/Tape&Reel | 160 | 0.9 mA | 7 | - |
| MMUN5216DW | 7F | 4.7 | - | 3000/Tape&Reel | 160 | 1.9 mA | 3.3 | - |
| MMUN5230DW | 7G | 1 | 1 | 3000/Tape&Reel | 3 | 4.3 mA | 0.7 | 0.8 |
| MMUN5231DW | 7H | 2.2 | 2.2 | 3000/Tape&Reel | 8 | 2.3 mA | 1.5 | 0.8 |
| MMUN5232DW | 7J | 4.7 | 4.7 | 3000/Tape&Reel | 15 | 1.5 mA | 3.3 | 0.8 |
| MMUN5233DW | 7K | 4.7 | 47 | 3000/Tape&Reel | 80 | 0.18 mA | 3.3 | 0.055 |
| MMUN5234DW | 7L | 22 | 47 | 3000/Tape&Reel | 80 | 0.13 mA | 15.4 | 0.38 |
| MMUN5235DW | 7M | 2.2 | 47 | 3000/Tape&Reel | 80 | 0.2 mA | 1.54 | 0.038 |
| MMUN5238DW | 7Q | 2.2 | - | 3000/Tape&Reel | 160 | 4 mA | 1.54 | - |
| MMUN5241DW | 7T | 100 | - | 3000/Tape&Reel | 160 | 0.1 mA | 70 | - |
| Maximum Ratings (TA = 25C unless otherwise noted) | ||||||||
| Collector-Base Voltage (VCBO) | 50 Vdc | |||||||
| Collector-Emitter Voltage (VCEO) | 50 Vdc | |||||||
| Collector Current (IC) | 100 mAdc | |||||||
| Thermal Characteristics | ||||||||
| Total Device Dissipation (PD) (One Junction Heated, TA= 25C) | 187 mW (Note 1) | |||||||
| Derate above 25C (One Junction Heated) | 1.5 mW/C (Note 1) | |||||||
| Junction-to-Ambient Thermal Resistance (RJA) (One Junction Heated) | 670 C/W (Note 1) | |||||||
| Total Device Dissipation (PD) (Both Junctions Heated, TA= 25C) | 250 mW (Note 1) | |||||||
| Derate above 25C (Both Junctions Heated) | 2.0 mW/C (Note 1) | |||||||
| Junction-to-Ambient Thermal Resistance (RJA) (Both Junctions Heated) | 493 C/W (Note 1) | |||||||
| Junction-to-Lead Thermal Resistance (RJL) (Both Junctions Heated) | 188 C/W (Note 1) | |||||||
| Junction and Storage Temperature (TJ, Tstg) | 55 to +150 C | |||||||
| Electrical Characteristics (TA= 25C unless otherwise noted) | ||||||||
| Collector Base Cutoff Current (ICBO) at VCB = 50 V | 100 nA | |||||||
| Collector Emitter Cutoff Current (ICEO) at VCE = 50 V | 500 nA | |||||||
| Collector Base Breakdown Voltage (V(BR)CBO) at IC = 10 A | 50 V | |||||||
| Collector Emitter Breakdown Voltage (V(BR)CEO) at IC = 2 mA | 50 V | |||||||
| Output Voltage (on) (VOL) at VCC = 5 V, RL = 1 K | 0.2 V (Typical) | |||||||
| Output Voltage (off) (VOH) at VCC = 5 V, RL = 1 K | 4.9 V (Typical) | |||||||
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Sellina