Electronic switching transistor CBI MMBT2222A NPN epitaxial planar die type in compact SOT23 package
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Product Description
Product Overview
The MMBT2222A is an NPN epitaxial planar die construction transistor. It features a complementary PNP type available (MMBT2907A). This transistor is housed in a SOT-23 package, a plastic surface-mounted package with 3 leads. It is suitable for various electronic applications requiring reliable switching and amplification.
Product Attributes
- Type: NPN Transistor
- Construction: Epitaxial planar die
- Complementary Type: MMBT2907A (PNP)
- Package: SOT-23 (Plastic surface mounted, 3 leads)
- Marking: 1P
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | 75 | V | |||
| VCEO | Collector-Emitter Voltage | 40 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current - Continuous | 600 | mA | |||
| PC | Collector Dissipation | 250 | mW | |||
| RJA | Thermal Resistance, Junction to Ambient | 500 | /W | |||
| TJ | Junction Temperature | 150 | ||||
| Tstg | Storage Temperature | -55 | to | +150 | ||
| Electrical Characteristics (Ta=25 unless otherwise specified) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC= 10A, IE=0 | 75 | V | ||
| V(BR)CEO * | Collector-emitter breakdown voltage | IC= 10mA, IB=0 | 40 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB=60V, IE=0 | 0.01 | A | ||
| ICEX | Collector cut-off current | VCE=30V, VBE(off)=3V | 0.01 | A | ||
| IEBO | Emitter cut-off current | VEB= 3V, IC=0 | 0.1 | A | ||
| hFE(1) * | DC current gain | VCE=10V, IC= 150mA | 100 | 300 | ||
| hFE(2) | DC current gain | VCE=10V, IC= 0.1mA | 40 | |||
| hFE(3) * | DC current gain | VCE=10V, IC= 500mA | 42 | |||
| VCE(sat) * | Collector-emitter saturation voltage | IC=500 mA, IB= 50mA | 1 | V | ||
| VCE(sat) * | Collector-emitter saturation voltage | IC=150 mA, IB=15mA | 0.3 | V | ||
| VBE(sat) * | Base-emitter saturation voltage | IC=500 mA, IB= 50mA | 2.0 | V | ||
| VBE(sat) * | Base-emitter saturation voltage | IC=150 mA, IB=15mA | 1.2 | V | ||
| fT | Transition frequency | VCE=20V, IC= 20mA, f=100MHz | 300 | MHz | ||
| td | Delay time | 10 | nS | |||
| tr | Rise time | VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA | 25 | nS | ||
| tS | Storage time | VCC=30V, IC=150mA, IB1=-IB2=15mA | 225 | nS | ||
| tf | Fall time | VCC=30V, IC=150mA, IB1=-IB2=15mA | 60 | nS | ||
| *pulse test: Pulse Width 300s, Duty Cycle 2.0%. | ||||||
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