NPN Silicon Epitaxial Planar Transistor CBI MMUN2215 Featuring Integrated Base and Emitter Resistors
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MOQ:
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Delivery Time:
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Product Description
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance in various electronic systems.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Silicon Epitaxial Planar
- Package: SOT-23 Plastic Package
Technical Specifications
| Model | R1 (Input) (K) | R2 (K) | Marking | hFE (Min. @ VCE=10V, IC=5mA) | ICBO (Max. @ VCB=50V) | ICEO (Max. @ VCE=50V) | IEBO (Max. @ VEB=6V) | V(BR)CBO (Min. @ IC=10A) | V(BR)CEO (Min. @ IC=2mA) | VCEsat (Max. @ IC=10mA, IB=0.3mA) | VCEsat (Max. @ IC=10mA, IB=5mA) | VOL (Max. @ VCC=5V, RL=1K) | VOH (Min. @ VCC=5V, RL=1K) | R1 (Input) Range (K) | R1/R2 Ratio |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN2211 | 10 | 10 | A8B | 35 | 100 nA | 500 nA | 0.5 mA | 50 V | 50 V | - | - | 0.2 V | 4.9 V | 7 - 13 | 0.8 |
| MMUN2212 | 22 | 22 | A8A | 60 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | - | - | 0.2 V | 4.9 V | 15.4 - 28.6 | 0.8 |
| MMUN2213 | 47 | 47 | A8C | 80 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | - | - | 0.2 V | 4.9 V | 32.9 - 61.1 | 1.2 |
| MMUN2214 | 10 | 47 | A8D | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | - | - | 0.2 V | 4.9 V | 7 - 13 | 0.17 |
| MMUN2215 | 10 | A8E | 160 | 100 nA | 500 nA | 0.9 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 7 - 13 | - | |
| MMUN2216 | 10 | A8F | 160 | 100 nA | 500 nA | 1.9 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 7 - 13 | - | |
| MMUN2230 | 1 | 1 | A8G | 3 | 100 nA | 500 nA | 4.3 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 0.7 - 1.3 | 0.055 |
| MMUN2231 | 2.2 | 2.2 | A8H | 8 | 100 nA | 500 nA | 2.3 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 1.54 - 2.86 | 0.38 |
| MMUN2232 | 4.7 | 4.7 | A8J | 15 | 100 nA | 500 nA | 1.5 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 3.3 - 6.1 | 0.056 |
| MMUN2233 | 4.7 | 47 | A8K | 80 | 100 nA | 500 nA | 0.18 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 3.3 - 6.1 | 0.1 |
| MMUN2234 | 22 | 47 | A8L | 80 | 100 nA | 500 nA | 0.13 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 15.4 - 28.6 | 0.47 |
| MMUN2235 | 2.2 | 47 | A8M | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 1.54 - 2.86 | 0.047 |
| MMUN2238 | 2.2 | A8R | 160 | 100 nA | 500 nA | 4 mA | 50 V | 50 V | 0.25 V | 0.25 V | 0.2 V | 4.9 V | 1.54 - 2.86 | - | |
| MMUN2241 | 100 | A8U | 160 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | - | - | 0.2 V | 4.9 V | 70 - 130 | - |
| Absolute Maximum Ratings (Ta = 25 C) | Symbol | Value | Unit |
|---|---|---|---|
| Collector Base Voltage | VCBO | 50 | V |
| Collector Emitter Voltage | VCEO | 50 | V |
| Collector Current | IC | 100 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | TS | -55 to +150 | C |
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