Integrated Resistor NPN Silicon Epitaxial Planar Transistor CBI MMUN2213 for Interface and Drive Circuits

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying external circuitry. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic designs.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package: SOT-23 Plastic Package

Technical Specifications

Model	R1 (K)	R2 (K)	Marking	hFE (VCE=10V, IC=5mA) Min.	ICBO (VCB=50V) Max.	ICEO (VCE=50V) Max.	IEBO (VEB=6V) Max.	V(BR)CBO (IC=10A) Min.	V(BR)CEO (IC=2mA) Min.	VCEsat (IC=10mA, IB=0.3mA) Max.	VCEsat (IC=10mA, IB=5mA) Max.	VCEsat (IC=10mA, IB=1mA) Max.	VOL (VCC=5V, RL=1K) Max.	VOH (VCC=5V, RL=1K) Min.	R1 (K)	R2 (K)	R1/R2
MMUN2211	10	10	A8B	35	-100 nA	-500 nA	0.5 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	7	10	0.8
MMUN2212	22	22	A8A	60	-100 nA	-500 nA	0.2 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	15.4	22	0.8
MMUN2213	47	47	A8C	80	-100 nA	-500 nA	0.1 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	32.9	47	0.8
MMUN2214	10	47	A8D	80	-100 nA	-500 nA	0.2 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	7	47	0.17
MMUN2215	10		A8E	160	-100 nA	-500 nA	0.9 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	7		-
MMUN2216	4.7		A8F	160	-100 nA	-500 nA	1.9 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	3.3		-
MMUN2230	1	1	A8G	3	-100 nA	-500 nA	4.3 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	0.7	1	0.8
MMUN2231	2.2	2.2	A8H	8	-100 nA	-500 nA	2.3 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	1.5	2.2	0.8
MMUN2232	4.7	4.7	A8J	15	-100 nA	-500 nA	1.5 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	3.3	4.7	0.8
MMUN2233	4.7	47	A8K	80	-100 nA	-500 nA	0.18 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	3.3	47	0.055
MMUN2234	22	47	A8L	80	-100 nA	-500 nA	0.13 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	15.4	47	0.38
MMUN2235	2.2	47	A8M	80	-100 nA	-500 nA	0.2 mA	50 V	50 V	0.25 V	0.25 V	-	0.2 V	4.9 V	1.54	47	0.038
MMUN2238	2.2		A8R	160	-100 nA	-500 nA	4 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	1.54		-
MMUN2241	100		A8U	160	-100 nA	-500 nA	0.1 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	70		-

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	50	V
Collector Emitter Voltage	VCEO	50	V
Collector Current	IC	100	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-55 to +150	C