Small Package PNP Transistor CBI S9015W Offering Amplification and Switching in Electronic Circuits

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Product Description

Product Overview

This PNP transistor is designed for small surface mount applications and offers high DC current gain. It is suitable for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-323
Marking: FR

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage	VCBO				-50	V
Collector-Emitter Voltage	VCEO				-45	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-100	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance From Junction To Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-100A, IB=0	-45			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V, IE=0			-100	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0			-100	nA
DC current gain	hFE	VCE=-5V, IC=-1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB=-10mA			-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-10mA			-1	V
Base-emitter voltage	VBE	VCE=-5V, IC=-1mA	-0.6	-0.75		V
Transition frequency	fT	VCE=-5V,IC=-10mA , f=30MHz			150	MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			7	pF