SOT23 Package PNP Silicon Epitaxial Transistor CBI BC858C Ideal for Switching and Amplifier Circuits
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Product Description
Product Overview
This document details PNP Silicon Epitaxial Transistors designed for switching and amplifier applications. These transistors are housed in a SOT-23 plastic package. They offer a range of models with varying voltage and current gain characteristics, suitable for diverse electronic circuit designs.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-23 Plastic Package
- Material: Silicon Epitaxial Transistor
Technical Specifications
| Absolute Maximum Ratings (Ta = 25 C) | Symbol | Value | Unit | |
|---|---|---|---|---|
| Collector Base Voltage | BC856 | -VCBO | 80 | V |
| BC857, BC860 | -VCBO | 50 | V | |
| BC858, BC859 | -VCBO | 30 | V | |
| Collector Emitter Voltage | BC856 | -VCEO | 65 | V |
| BC857, BC860 | -VCEO | 45 | V | |
| BC858, BC859 | -VCEO | 30 | V | |
| Emitter Base Voltage | -VEBO | 5 | V | |
| Collector Current | -IC | 100 | mA | |
| Peak Collector Current | -ICM | 200 | mA | |
| Power Dissipation | Ptot | 200 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -65 to +150 | C | |
| Characteristics at Ta = 25 C | Symbol | Min. | Max. | Unit | |
|---|---|---|---|---|---|
| DC Current Gain | Group A | hFE | 110 | 220 | - |
| Group B | hFE | 200 | 450 | - | |
| Group C | hFE | 420 | 800 | - | |
| Collector Base Cutoff Current (-VCB = 30 V) | -ICBO | - | 15 | nA | |
| Collector Base Breakdown Voltage (-IC = 10 A) | BC856 | -V(BR)CBO | 80 | - | V |
| BC857, BC860 | -V(BR)CBO | 50 | - | V | |
| BC858, BC859 | -V(BR)CBO | 30 | - | V | |
| Collector Emitter Breakdown Voltage (-IC = 10 A) | BC856 | -V(BR)CES | 80 | - | V |
| BC857, BC860 | -V(BR)CES | 50 | - | V | |
| BC858, BC859 | -V(BR)CES | 30 | - | V | |
| Collector Emitter Breakdown Voltage (-IC = 10 mA) | BC856 | -V(BR)CEO | 65 | - | V |
| BC857, BC860 | -V(BR)CEO | 45 | - | V | |
| BC858, BC859 | -V(BR)CEO | 30 | - | V | |
| Emitter Base Breakdown Voltage (-IE = 1 A) | -V(BR)EBO | 5 | - | V | |
| Collector Emitter Saturation Voltage | (-IC = 10 mA, -IB = 0.5 mA) | -VCE(sat) | - | 0.3 | V |
| (-IC = 100 mA, -IB = 5 mA) | -VCE(sat) | - | 0.65 | V | |
| Base Emitter On Voltage | (-IC = 2 mA, -VCE = 5 V) | -VBE(on) | 0.6 | - | V |
| (-IC = 10 mA, -VCE = 5 V) | -VBE(on) | 0.75 | 0.82 | V | |
| Current Gain Bandwidth Product (-VCE = 5 V, -IC = 10 mA, f = 100 MHz) | fT | 100 | - | MHz | |
| Output Capacitance (-VCB = 10 V, f = 1 MHz) | Cob | - | 6 | pF | |
| Noise Figure | BC856, BC857, BC858 (RG = 2 K, f = 1 KHz) | NF | - | 4 | dB |
| BC859, BC860 (RG = 2 K, f = 30 ~15 KHz) | NF | - | 2 | dB | |
| SOT-23 Package Dimensions | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| A | 0.90 | 1.10 | mm | ||
| A1 | 0.013 | 0.100 | mm | ||
| B | 1.80 | 2.00 | mm | ||
| bp | 0.35 | 0.50 | mm | ||
| C | 0.09 | 0.150 | mm | ||
| D | 2.80 | 3.00 | mm | ||
| E | 1.20 | 1.40 | mm | ||
| HE | 2.20 | 2.80 | mm | ||
| Lp | 0.20 | 0.50 | mm | ||
| 0 | 5 | - | |||
| MARKING CODE | TYPE | MARKING |
|---|---|---|
| 856A | BC856 | 3A |
| 856B | BC856 | 3B |
| 856C | BC856 | 3C |
| 857A | BC857 | 3E |
| 857B | BC857 | 3F |
| 857C | BC857 | 3G |
| 858A | BC858 | 3J |
| 858B | BC858 | 3K |
| 858C | BC858 | 3L |
| 859A | BC859 | 4A |
| 859B | BC859 | 4B |
| 859C | BC859 | 4C |
| 860A | BC860 | 4E |
| 860B | BC860 | 4F |
| 860C | BC860 | 4G |
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