PNP transistor CBI MMBT5401 suitable for medium power amplification and switching electronic devices

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Product Description

The MMBT5401 is a PNP transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5551 transistor.

Parameter	Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage	VCBO			-160	V
Collector-Emitter Voltage	VCEO			-150	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-0.6	A
Collector Power Dissipation	PC			0.3	W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0	-160		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-150		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-120 V, IE=0		-0.1	A
Emitter cut-off current	IEBO	VEB=-4V , IC=0		-0.1	A
DC current gain	hFE1	VCE= -5V, IC= -1mA	80
	hFE2	VCE= -5V, IC=-10mA	100	300
	hFE3	VCE= -5V, IC=-50mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-50 mA, IB= -5mA		-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= -50 mA, IB= -5mA		-1	V
Transition frequency	fT	VCE= -5V, IC= -10mA		100	MHz