Integrated Dual Bias Resistor Transistors CBI MMUN5232DW in Compact SOT363 Package for Surface Mount
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Product Description
Product Overview
The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a series base resistor and a base-emitter resistor, effectively replacing discrete components and their external bias networks. This integration simplifies circuit design, reduces board space, and lowers component count, making them ideal for low-power surface mount applications where space is critical. The MMUN5211DW series houses two BRT devices within a compact SOT-363 package. The product material complies with RoHS requirements.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Origin: China
- Material Compliance: RoHS
- Package Type: SOT-363
Technical Specifications
| Model | Marking | R1 (K) | R2 (K) | Shipping | DC Current Gain (hFE) Min. | Collector Base Cutoff Current (ICBO) Max. | Collector Emitter Cutoff Current (ICEO) Max. | Emitter Base Cutoff Current (IEBO) Max. | Collector Base Breakdown Voltage (V(BR)CBO) Min. | Collector Emitter Breakdown Voltage (V(BR)CEO) Min. | VCEsat (V) Typ. | Output Voltage (on) (VOL) Max. | Output Voltage (off) (VOH) Min. | R1 (K) Input Resistor | R1/R2 Resistor Ratio |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN5211DW | 7A | 10 | 10 | 3000/Tape&Reel | 35 | 100 nA | 500 nA | 0.5 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 7 | 0.8 |
| MMUN5212DW | 7B | 22 | 22 | 3000/Tape&Reel | 60 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 15.4 | 0.8 |
| MMUN5213DW | 7C | 47 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V (VCC=5V, VB=3.5V, RL=1K) | 32.9 | 0.8 |
| MMUN5214DW | 7D | 10 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 7 | 0.17 |
| MMUN5215DW | 7E | 10 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.9 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=1mA) | 0.2 V | 4.9 V | 7 | - | |
| MMUN5216DW | 7F | 4.7 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 1.9 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=1mA) | 0.2 V | 4.9 V | 3.3 | - | |
| MMUN5230DW | 7G | 1 | 1 | 3000/Tape&Reel | 3 | 100 nA | 500 nA | 4.3 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V (VCC=5V, VB=0.25V, RL=1K) | 0.7 | 0.8 |
| MMUN5231DW | 7H | 2.2 | 2.2 | 3000/Tape&Reel | 8 | 100 nA | 500 nA | 2.3 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 1.5 | 0.055 |
| MMUN5232DW | 7J | 4.7 | 4.7 | 3000/Tape&Reel | 15 | 100 nA | 500 nA | 1.5 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 3.3 | 0.38 |
| MMUN5233DW | 7K | 4.7 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.18 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 3.3 | 0.055 |
| MMUN5234DW | 7L | 22 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.13 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 15.4 | 0.38 |
| MMUN5235DW | 7M | 2.2 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 1.54 | 0.038 |
| MMUN5238DW | 7Q | 2.2 | - | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 4 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 4.9 V | 1.54 | - |
| MMUN5241DW | 7T | 100 | - | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V (IC=10mA, IB=0.3mA) | 0.2 V | 0.2 V (VCC=5V, VB=5V, RL=1K) | 70 | - |
Maximum Ratings (TA = 25C unless otherwise noted, common for Q1 and Q2)
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Collector Current | IC | 100 | mAdc |
Thermal Characteristics
(One Junction Heated)
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Total Device Dissipation (TA= 25C) | PD | 187 (Note 1.) mW |
| Derate above 25C | - | 1.5 (Note 1.) mW/C |
| Thermal Resistance Junction-to-Ambient | RJA | 670 (Note 1.) C/W |
(Both Junctions Heated)
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Total Device Dissipation (TA= 25C) | PD | 250 (Note 1.) mW |
| Derate above 25C | - | 2.0 (Note 1.) mW/C |
| Thermal Resistance Junction-to-Ambient | RJA | 493 (Note 1.) C/W |
| Thermal Resistance Junction-to-Lead | RJL | 188 (Note 1.) C/W |
| Characteristic | Symbol | Max Unit |
|---|---|---|
| Junction and Storage Temperature | TJ, Tstg | 55 to +150 C |
Notes:
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
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