MMUN5213DW Dual Bias Resistor Transistors NPN Silicon Transistor with Base Emitter Resistor Network
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Product Description
MMUN5211DW Series Dual Bias Resistor Transistors
Product Overview
The MMUN5211DW Series Dual Bias Resistor Transistors (BRT) are NPN silicon surface mount transistors featuring a monolithic bias resistor network. Each BRT integrates a single transistor with a base resistor and a base-emitter resistor, effectively replacing discrete components and simplifying circuit design. This series is designed for low power surface mount applications where board space is limited. The MMUN5211DW series offers advantages such as simplified circuit design, reduced board space, and a lower component count. The product material complies with RoHS requirements.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Material Compliance: RoHS
Technical Specifications
| Model | Marking | R1 (K) | R2 (K) | Shipping | DC Current Gain (hFE) Min. | Collector Base Cutoff Current (ICBO) Max. | Collector Emitter Cutoff Current (ICEO) Max. | Emitter Base Cutoff Current (IEBO) Max. | Collector Base Breakdown Voltage (V(BR)CBO) Min. | Collector Emitter Breakdown Voltage (V(BR)CEO) Min. | Collector Emitter Saturation Voltage (VCEsat) Max. | Output Voltage (on) (VOL) Max. | Output Voltage (off) (VOH) Min. | Input Resistor (R1) Range | Resistor Ratio (R1/R2) Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN5211DW | 7A | 10 | 10 | 3000/Tape&Reel | 35 | 100 nA | 500 nA | 0.5 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 - 13 K | 0.8 |
| MMUN5212DW | 7B | 22 | 22 | 3000/Tape&Reel | 60 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 13 - 28.6 K | 0.8 |
| MMUN5213DW | 7C | 47 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 28.6 - 61.1 K | 0.8 |
| MMUN5214DW | 7D | 10 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 - 13 K | 0.17 |
| MMUN5215DW | 7E | 10 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.9 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 7 - 13 K | 0.17 | |
| MMUN5216DW | 7F | 4.7 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 1.9 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 - 6.1 K | 0.17 | |
| MMUN5230DW | 7G | 1 | 1 | 3000/Tape&Reel | 3 | 100 nA | 500 nA | 4.3 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 0.7 - 1.3 K | 0.8 |
| MMUN5231DW | 7H | 2.2 | 2.2 | 3000/Tape&Reel | 8 | 100 nA | 500 nA | 2.3 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.5 - 2.9 K | 0.8 |
| MMUN5232DW | 7J | 4.7 | 4.7 | 3000/Tape&Reel | 15 | 100 nA | 500 nA | 1.5 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 - 6.1 K | 0.8 |
| MMUN5233DW | 7K | 4.7 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.18 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 3.3 - 6.1 K | 0.055 |
| MMUN5234DW | 7L | 22 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.13 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 15.4 - 28.6 K | 0.38 |
| MMUN5235DW | 7M | 2.2 | 47 | 3000/Tape&Reel | 80 | 100 nA | 500 nA | 0.2 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.54 - 2.88 K | 0.038 |
| MMUN5238DW | 7Q | 2.2 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 4 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 1.54 - 2.88 K | - | |
| MMUN5241DW | 7T | 100 | 3000/Tape&Reel | 160 | 100 nA | 500 nA | 0.1 mA | 50 V | 50 V | 0.25 V | 0.2 V | 4.9 V | 70 - 130 K | - | |
| Maximum Ratings (TA = 25C unless otherwise noted, common for Q1 and Q2) | |||||||||||||||
| Rating | Symbol | Value | Unit | ||||||||||||
| Collector-Base Voltage | VCBO | 50 | Vdc | ||||||||||||
| Collector-Emitter Voltage | VCEO | 50 | Vdc | ||||||||||||
| Collector Current | IC | 100 | mAdc | ||||||||||||
| Thermal Characteristics (One Junction Heated) | |||||||||||||||
| Characteristic | Symbol | Max Unit | |||||||||||||
| Total Device Dissipation @ TA=25C | PD | 187 (Note 1.) | mW | ||||||||||||
| Derate above 25C | 1.5 (Note 1.) | mW/C | |||||||||||||
| Thermal Resistance Junction-to-Ambient | RJA | 670 (Note 1.) 490 (Note 2.) | C/W | ||||||||||||
| Thermal Characteristics (Both Junctions Heated) | |||||||||||||||
| Characteristic | Symbol | Max Unit | |||||||||||||
| Total Device Dissipation @ TA=25C | PD | 250 (Note 1.) 385 (Note 2.) | mW | ||||||||||||
| Derate above 25C | 2.0 (Note 1.) 3.0 (Note 2.) | mW/C | |||||||||||||
| Thermal Resistance Junction-to-Ambient | RJA | 493 (Note 1.) 325 (Note 2.) | C/W | ||||||||||||
| Thermal Resistance Junction-to-Lead | RJL | 188 (Note 1.) 208 (Note 2.) | C/W | ||||||||||||
| Junction and Storage Temperature | TJ , Tstg | 55 to +150 | C | ||||||||||||
| Notes: 1. FR4 @ Minimum Pad 2. FR4 @ 1.0 x 1.0 inch Pad | |||||||||||||||
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Sellina