Switching Transistor CBI MMUN2212 NPN Silicon Epitaxial Planar Type in SOT23 Plastic Package for Drive Circuits

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Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Material: Silicon Epitaxial Planar
Package: SOT-23 Plastic Package

Technical Specifications

Model	R1 (K)	R2 (K)	Marking	hFE (VCE=10V, IC=5mA) Min.	ICBO (VCB=50V) Max.	ICEO (VCE=50V) Max.	IEBO (VEB=6V) Max.	V(BR)CBO (IC=10A) Min.	V(BR)CEO (IC=2mA) Min.	VCEsat (IC=10mA, IB=0.3mA) Max.	VCEsat (IC=10mA, IB=5mA) Max.	VCEsat (IC=10mA, IB=1mA) Max.	VOL (VCC=5V, RL=1K) Max.	VOH (VCC=5V, RL=1K) Min.	R1 (K)	R1/R2
MMUN2211	10	10	A8B	35	100 nA	500 nA	0.5 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	7	0.8
MMUN2212	22	22	A8A	60	100 nA	500 nA	0.2 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	15.4	1
MMUN2213	47	47	A8C	80	100 nA	500 nA	0.1 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	32.9	1.2
MMUN2214	10	47	A8D	80	100 nA	500 nA	0.2 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	7	0.17
MMUN2215	10		A8E	160	100 nA	500 nA	0.9 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	7	-
MMUN2216	4.7		A8F	160	100 nA	500 nA	1.9 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	3.3	-
MMUN2230	1	1	A8G	3	100 nA	500 nA	4.3 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	0.7	0.055
MMUN2231	2.2	2.2	A8H	8	100 nA	500 nA	2.3 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	1.5	0.38
MMUN2232	4.7	4.7	A8J	15	100 nA	500 nA	1.5 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	3.3	0.038
MMUN2233	4.7	47	A8K	80	100 nA	500 nA	0.18 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	3.3	0.185
MMUN2234	22	47	A8L	80	100 nA	500 nA	0.13 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	15.4	0.56
MMUN2235	2.2	47	A8M	80	100 nA	500 nA	0.2 mA	50 V	50 V	-	0.25 V	-	0.2 V	4.9 V	1.54	0.056
MMUN2238	2.2		A8R	160	100 nA	500 nA	4 mA	50 V	50 V	0.25 V	-	-	0.2 V	4.9 V	1.54	-
MMUN2241	100		A8U	160	100 nA	500 nA	0.1 mA	50 V	50 V	-	-	-	0.2 V	4.9 V	70	-

Parameter	Symbol	Value	Unit
Collector Base Voltage	VCBO	50	V
Collector Emitter Voltage	VCEO	50	V
Collector Current	IC	100	mA
Total Power Dissipation	Ptot	200	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	TS	-55 to +150	C