Switching PNP Silicon Epitaxial Planar Transistor CBI DTA114EE Featuring Built-in Bias Resistors

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The MMDTA114EE is a PNP Silicon Epitaxial Planar Transistor designed for switching and interface circuit applications, as well as drive circuits. Its key advantage lies in the integration of built-in bias resistors, which simplify circuit design and reduce the overall quantity of parts and manufacturing process steps.

Product Attributes

Brand: MMDTA (implied by model number)
Type: PNP Silicon Epitaxial Planar Transistor
Features: Built-in bias resistors

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25)
Collector Emitter Voltage	VCEO	-50	V
Input Voltage	VI	+10 to -40	V
Collector Current	IC	-100	mA
Power Dissipation	Ptot	150	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55 to +150
Characteristics at Ta = 25
DC Current Gain at VCE = -5V, IC = -5mA	hFE	30	-
Collector Base Cutoff Current at VCB = -50V	ICBO	-500	nA
Emitter Base Cutoff Current at VEB = -5V	IEBO	-0.88	mA
Collector Emitter Saturation Voltage at IC = -10mA, IB = -0.5mA	VCE(sat)	-0.3	V
Input on Voltage at VCE = -0.3V, IC = -10mA	VI(on)	-3	V
Input off Voltage at VCE = -5V, IC = -100uA	VI(off)	-0.5	V
Transition frequency at VCE = -10V, IE = -5mA, f = 100MHz	fT	250	MHz
Input Resistance R1	R1	7 to 13	K
Resistance Ratio R2 / R1	R2 / R1	0.8 to 1.2	-
Input Resistance R2 + 1	R2 + 1	20 to 22	K