Silicon Epitaxial Planar Switching Diode CBI 1SS184 with Low Forward Voltage and Fast Recovery Time

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Product Description

Product Overview

The 1SS184 is a silicon epitaxial planar switching diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it suitable for demanding electronic circuits.

Product Attributes

Material: Silicon Epitaxial Planar
Package Type: SOT-23 Plastic Package
Marking Code: A4

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25 C)
Maximum Peak Reverse Voltage	VRM	85	V
Reverse Voltage	VR	80	V
Average Rectified Forward Current	IF(AV)	100	mA
Maximum Peak Forward Current	IFM	300	mA
Non-repetitive Peak Forward Surge Current (10 ms)	IFSM	2	A
Power Dissipation	Ptot	350	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Characteristics (Ta = 25 C)
Forward Voltage at IF = 100 mA	VF	1.2	V
Reverse Current at VR = 30 V	IR	0.1	A
Reverse Current at VR = 80 V	IR	0.5	A
Total Capacitance at VR = 0 , f = 1 MHz	CT	3	pF
Reverse Recovery Time at IF = 10 mA	trr	4	ns