Fast Recovery Planar Switching Diode CBI 1SS226 with Low Forward Voltage and Small Total Capacitance

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Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding electronic circuits.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Package Type: SOT-23 Plastic Package
Marking Code: C3

Technical Specifications

Parameter	Symbol	Value	Unit	Condition
Maximum Peak Reverse Voltage	VRM	85	V
Reverse Voltage	VR	80	V
Average Rectified Forward Current	IF(AV)	100	mA
Maximum Peak Forward Current	IFM	300	mA
Non-repetitive Peak Forward Surge Current	IFSM	2	A	(10 ms)
Power Dissipation	Ptot	350	mW
Junction Temperature	Tj	150	C
Storage Temperature Range	Tstg	-55 to +150	C
Forward Voltage	VF	1.2	V	at IF = 100 mA
Reverse Current	IR	0.5	A	at VR = 80 V
Total Capacitance	CT	3	pF	at VR = 0 , f = 1 MHz
Reverse Recovery Time	trr	4	ns	at IF = 10 mA