Schottky Barrier Diode CBI BAS70W-06 Plastic Encapsulated with Low Leakage Current and Fast Recovery

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Product Description

Product Overview

The BAS70W series are plastic-encapsulated Schottky barrier diodes designed for applications requiring low turn-on voltage and fast switching speeds. These diodes are available in a lead-free version. They are suitable for general-purpose switching applications.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Packaging: Plastic surface mounted package; 3 leads SOT-323
Material: Plastic encapsulation
Color: Normal device (unless specified as Green molding compound)

Technical Specifications

Model	Marking	DC Voltage (VR)	Forward Continuous Current (IF)	Power Dissipation (PD)	Junction Temperature (TJ)	Reverse breakdown voltage (V(BR))	Reverse voltage leakage current (IR)	Forward voltage (VF)	Diode capacitance (CD)	Reveres recovery time (trr)	Thermal Resistance (RJA)	Non-Repetitive Peak Forward Surge Current (IFSM)	Storage Temperature (Tstg)
BAS70W	K73	70 V	70 mA	200 mW	125	70 V (IR= 10A)	100 nA (VR=50V)	410 mV (IF=1mA) / 1000 mV (IF=15mA)	2 pF (VR=0V,f=1MHz)	5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100)	500 /W	100 mA (@ t = 8.3ms)	-55~+150
BAS70W-04	K74	70 V	70 mA	200 mW	125	70 V (IR= 10A)	100 nA (VR=50V)	410 mV (IF=1mA) / 1000 mV (IF=15mA)	2 pF (VR=0V,f=1MHz)	5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100)	500 /W	100 mA (@ t = 8.3ms)	-55~+150
BAS70W-05	K75	70 V	70 mA	200 mW	125	70 V (IR= 10A)	100 nA (VR=50V)	410 mV (IF=1mA) / 1000 mV (IF=15mA)	2 pF (VR=0V,f=1MHz)	5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100)	500 /W	100 mA (@ t = 8.3ms)	-55~+150
BAS70W-06	K76	70 V	70 mA	200 mW	125	70 V (IR= 10A)	100 nA (VR=50V)	410 mV (IF=1mA) / 1000 mV (IF=15mA)	2 pF (VR=0V,f=1MHz)	5 ns (IF=IR=10mA,Irr=0.1xIR, RL=100)	500 /W	100 mA (@ t = 8.3ms)	-55~+150