Fast Recovery Schottky Diode CBI BAS70-05 with Low Forward Voltage and Enhanced Transient Protection

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Product Description

Product Overview

The BAS70 series of Surface Mount Schottky Barrier Diodes are designed for applications requiring low turn-on voltage and fast switching speeds. These diodes feature a PN junction guard ring for enhanced transient and ESD protection, making them suitable for various electronic circuits.

Product Attributes

Package Type: SOT-23 Plastic Package
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Model	Marking Code	Repetitive Peak Reverse Voltage (VRRM)	Non-Repetitive Peak Reverse Voltage (VRSM)	Maximum DC Blocking Voltage (VR)	Average Forward Rectified Current (IF(AV))	Peak Forward Surge Current (IFSM) (t < 10 ms)	Power Dissipation (PD)	Thermal Resistance Junction to Ambient Air (RJA)	Operating Junction Temperature Range (Tj)	Storage Temperature Range (Tstg)	Forward Voltage (VF) at IF = 1 mA	Forward Voltage (VF) at IF = 15 mA	Reverse Breakdown Voltage (V(BR)R) at IR = 10 A	Reverse Current (IR) at VR = 50 V	Total Capacitance (CT) at VR = 0, f = 1 MHz	Reverse Recovery Time (trr) at IF = IR = 10 mA to IR = 1 mA, RL = 100
BAS70	73	70 V	70 V	70 V	70 mA	100 mA	200 mW	625 C/W	-55 to +125 C	-65 to +150 C	-	0.41 V	70 V	-	-	-
BAS70-04	74	70 V	70 V	70 V	70 mA	100 mA	200 mW	625 C/W	-55 to +125 C	-65 to +150 C	-	1 V	70 V	100 nA	2 pF	5 ns
BAS70-05	75	70 V	70 V	70 V	70 mA	100 mA	200 mW	625 C/W	-55 to +125 C	-65 to +150 C	-	1 V	70 V	100 nA	2 pF	5 ns
BAS70-06	76	70 V	70 V	70 V	70 mA	100 mA	200 mW	625 C/W	-55 to +125 C	-65 to +150 C	-	1 V	70 V	100 nA	2 pF	5 ns