Switching diode CBI DAP222T with 4 nanosecond recovery time and 0.1 microamp reverse leakage current

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Product Description

Product Overview

The DAP222T is a switching diode designed for high-speed applications and suitable for high packing density layouts. It offers high reliability and is ideal for various electronic circuits requiring efficient switching. Its characteristics include a reverse breakdown voltage of 80V and a low forward voltage drop.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Model: DAP222T
Type: Plastic-Encapsulate Transistors, SWITCHING DIODE
Package: SOT-523

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Reverse breakdown voltage	V(BR)	IR= 100A	80		V
Reverse voltage leakage current	IR	VR=70V		0.1	A
Forward voltage	VF	IF=100mA		1.2	V
Diode capacitance	CD	VR=0, f=1MHz		3.5	pF
Reverse recovery time	trr	VR=6V, IF=IR=5mA		4	ns

Maximum Ratings

Parameter	Symbol	Limit	Unit
Non-Repetitive Peak Reverse Voltage	VRM	80	V
DC Blocking Voltage	VR	80	V
Forward Continuous Current	IFM	300	mA
Average Rectified Output Current	IO	100	mA
Power Dissipation	PD	150	mW
Operation Junction and Storage Temperature Range	TJ,TSTG	-55~+150
Forward Surge Current @t=8.3ms Non-Repetitive Peak	IFSM	2.0	A