Silicon epitaxial planar Schottky barrier diode CBI RB521S-40 with low forward voltage and ultra small mold type package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This is a silicon epitaxial planar Schottky barrier diode designed for rectifying small power applications. It features an ultra-small mold type, low forward voltage, and high reliability, making it suitable for various rectifying tasks.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Origin: China
- Package Type: SOD-523
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit |
|---|---|---|---|---|
| Characteristics at Ta = 25 C | ||||
| Forward Voltage at IF = 10 mA | VF | 0.16 | 0.3 | V |
| Forward Voltage at IF = 100 mA | VF | 0.31 | 0.54 | V |
| Forward Voltage at IF = 200 mA | VF | 0.41 | - | V |
| Reverse Current at VR = 10 V | IR | - | 20 | A |
| Reverse Current at VR = 40 V | IR | - | 90 | A |
| Absolute Maximum Ratings | ||||
| Parameter | Symbol | Value | Unit | |
| Repetitive Peak Reverse Voltage | VRM | 45 | V | |
| Reverse Voltage | VR | 40 | V | |
| Mean Rectifying Current | IO | 200 | mA | |
| Peak Forward Surge Current (60Hz for Cyc.) | IFSM | 1 | A | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| PIN DESCRIPTION | |
|---|---|
| 1 | Cathode |
| 2 | Anode |
Marking Code: "Z"
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina