Band Switching Diode CBI BA591WS with Small Inductance and Low Forward Resistance in SOD 323 Package
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Delivery Time:
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Product Description
Product Overview
This BAND SWITCHING DIODE is designed for applications requiring a very small plastic SMD package. It features low diode capacitance, low diode forward resistance, and small inductance, making it suitable for various electronic circuits where efficient switching and minimal signal interference are critical. The diode is housed in a compact SOD-323 package.
Product Attributes
- Marking Code: WL
- Package Type: SOD-323
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Parameter | Symbol | Value | Unit | Typ. | Max. |
|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | |||||
| Continuous Reverse Voltage | VR | 35 | V | ||
| Continuous Forward Current | IF | 100 | mA | ||
| Power Dissipation | Ptot | 500 | mW | ||
| Operating Junction Temperature Range | TJ | -65 to +150 | C | ||
| Storage Temperature Range | Tstg | -65 to +150 | C | ||
| Electrical Characteristics (at Ta = 25 C) | |||||
| Forward Voltage at IF = 10 mA | VF | V | - | 1 | |
| Reverse Current at VR = 20 V | IR | nA | - | 20 | |
| Diode Capacitance | CD | pF | - | 1.05 (at VR = 1 V, f = 1 MHz) | |
| 0.9 (at VR = 3 V, f = 1 MHz) | |||||
| Diode Forward Resistance | rD | - | 0.7 (at IF = 3 mA, f = 100 MHz) | ||
| 0.5 (at IF = 10 mA, f = 100 MHz) | |||||
| Reverse Resistance at VR = 1 V, f = 100 MHz | 1/gp | K | 100 | - | |
| Series Inductance | Ls | nH | 2 | - | |
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