Silicon Epitaxial Planar Switching Diode CBI BAS16 with Low Forward Voltage Fast Reverse Recovery

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Product Description

Product Overview

This is a Silicon Epitaxial Planar Switching Diode designed for ultra-high-speed switching applications. It features a small package, low forward voltage, fast reverse recovery time, and small total capacitance, making it ideal for demanding switching scenarios.

Product Attributes

Marking Code: 5D
Package Type: SOT-23 Plastic Package
Origin: Heyuan China Base Electronics Technology Co., Ltd.

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25 OC)
Repetitive Peak Reverse Voltage	VRRM	85	V
Continuous Reverse Voltage	VR	75	V
Continuous Forward Current	IF	215	mA
Repetitive Peak Forward Current	IFRM	500	mA
Non-Repetitive Peak Forward Surge Current (t = 1 s, t = 1 ms, t = 1 s)	IFSM	4	A
		1	A
		0.5	A
Power Dissipation	Ptot	350	mW
Junction Temperature	Tj	150	OC
Storage Temperature Range	Tstg	-65 to +150	OC
Characteristics (at Ta = 25 OC)
Forward Voltage	VF (at IF = 1 mA)	-	715 mV
	VF (at IF = 10 mA)	-	855 mV
	VF (at IF = 50 mA)	-	1 V
	VF (at IF = 150 mA)	-	1.25 V
Reverse Current	IR (at VR = 25 V)	-	30 nA
	IR (at VR = 75 V)	-	1 A
	IR (at VR = 25 V, TJ = 150 OC)	-	30 A
	IR (at VR = 75 V, TJ = 150 OC)	-	50 A
Reverse Breakdown Voltage (at IR = 100 A)	V(BR)R	75	V
Diode Capacitance (at VR = 0 , f = 1 MHz)	Cd	-	2 pF
Reverse Recovery Time (at IF = IR = 10 mA, RL = 50 )	trr	-	4 ns