NPN Silicon Transistor Central CZT5551 TR Surface Mount SOT223 Package for High Voltage Amplifier Circuits

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Product Description

Product Overview

The CENTRAL SEMICONDUCTOR CZT5551 is an NPN silicon transistor manufactured using the epitaxial planar process. Encased in an epoxy-molded surface mount SOT-223 package, this transistor is specifically designed for high voltage amplifier applications. It offers reliable performance for demanding electronic circuits.

Product Attributes

Brand: CENTRAL SEMICONDUCTOR
Model: CZT5551
Type: NPN Silicon Transistor
Package: SOT-223
Manufacturing Process: Epitaxial Planar
Mounting Type: Surface Mount

Technical Specifications

Symbol	Test Conditions	Min	Max	Units
MAXIMUM RATINGS (TA=25C)
VCBO			180	V
VCEO			160	V
VEBO			6.0	V
IC			600	mA
PD			2.0	W
TJ, Tstg		-65	+150	C
JA			62.5	C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
ICBO	VCB=120V		50	nA
ICBO	VCB=120V, TA=100C		50	A
IEBO	VEB=4.0V		50	nA
BVCBO	IC=100A	180		V
BVCEO	IC=1.0mA	160		V
BVEBO	IE=10A	6.0		V
VCE(SAT)	IC=10mA, IB=1.0mA		0.15	V
VCE(SAT)	IC=50mA, IB=5.0mA		0.20	V
VBE(SAT)	IC=10mA, IB=1.0mA		1.00	V
VBE(SAT)	IC=50mA, IB=5.0mA		1.00	V
hFE	VCE=5.0V, IC=1.0mA	80
hFE	VCE=5.0V, IC=10mA	80	250
hFE	VCE=5.0V, IC=50mA	30
fT	VCE=10V, IC=10mA, f=100MHz	100	300	MHz
Cob	VCB=10V, IE=0, f=1.0MHz		6.0	pF
Cib	VEB=0.5V, IC=0, f=1.0MHz		20	pF
hfe	VCE=10V, IC=1.0mA, f=1.0kHz	50	200
NF	VCE=5.0V, IC=200A, RS=10 f=10Hz to 15.7kHz		8.0	dB