Voltage Regulation Silicon Planar Zener Diodes CBI BZT52C4V7W with 500 mW Power Dissipation Capacity
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The BZT52C...W series are silicon planar Zener diodes ideally suited for automated assembly processes. These diodes offer a total power dissipation of up to 500 mW and are designed for various voltage regulation applications.
Product Attributes
- Brand: BZT (implied by product series)
- Type: Silicon Planar Zener Diodes
- Package: SOD-123
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 C) | ||||
| Power Dissipation | Ptot | 500 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature Range | TStg | -65 to +150 | C | |
| Characteristics (Ta = 25 C) | ||||
| Thermal Resistance Junction to Ambient Air | RthA | 340 | C/W | |
| Forward Voltage at IF = 10 mA | VF | 0.9 | V | |
| Zener Voltage Range (VZT for IZT) | ||||
| Type | Marking Code | VZ nom | IZT | VZT Range |
| BZT52C2V4W | MH | 2.4 | 5 | 2.2...2.6 V |
| BZT52C2V7W | MJ | 2.7 | 5 | 2.5...2.9 V |
| BZT52C3V0W | MK | 3.0 | 5 | 2.8...3.2 V |
| BZT52C3V3W | MM | 3.3 | 5 | 3.1...3.5 V |
| BZT52C3V6W | MN | 3.6 | 5 | 3.4...3.8 V |
| BZT52C3V9W | MP | 3.9 | 5 | 3.7...4.1 V |
| BZT52C4V3W | MR | 4.3 | 5 | 4...4.6 V |
| BZT52C4V7W | MX | 4.7 | 5 | 4.4...5 V |
| BZT52C5V1W | MY | 5.1 | 5 | 4.8...5.4 V |
| BZT52C5V6W | MZ | 5.6 | 5 | 5.2...6 V |
| BZT52C6V2W | NA | 6.2 | 5 | 5.8...6.6 V |
| BZT52C6V8W | NB | 6.8 | 5 | 6.4...7.2 V |
| BZT52C7V5W | NC | 7.5 | 5 | 7...7.9 V |
| BZT52C8V2W | ND | 8.2 | 5 | 7.7...8.7 V |
| BZT52C9V1W | NE | 9.1 | 5 | 8.5...9.6 V |
| BZT52C10W | NF | 10 | 5 | 9.4...10.6 V |
| BZT52C11W | NH | 11 | 5 | 10.4...11.6 V |
| BZT52C12W | NJ | 12 | 5 | 11.4...12.7 V |
| BZT52C13W | NK | 13 | 5 | 12.4...14.1 V |
| BZT52C15W | NM | 15 | 5 | 13.8...15.6 V |
| BZT52C16W | NN | 16 | 5 | 15.3...17.1 V |
| BZT52C18W | NP | 18 | 5 | 16.8...19.1 V |
| BZT52C20W | NR | 20 | 5 | 18.8...21.2 V |
| BZT52C22W | NX | 22 | 5 | 20.8...23.3 V |
| BZT52C24W | NY | 24 | 5 | 22.8...25.6 V |
| BZT52C27W | NZ | 27 | 2 | 25.1...28.9 V |
| BZT52C30W | PA | 30 | 2 | 28...32 V |
| BZT52C33W | PB | 33 | 2 | 31...35 V |
| BZT52C36W | PC | 36 | 2 | 34...38 V |
| BZT52C39W | PD | 39 | 2 | 37...41 V |
| Other Characteristics (Ta = 25 C) | ||||
| Parameter | Symbol | Value | Unit | Notes |
| Dynamic Impedance (ZZT) at IZT | ZZT | 600 (Max.) | See table above for specific values per type | |
| Dynamic Impedance (ZZK) at IZK | ZZK | 600 (Max.) | See table above for specific values per type | |
| Reverse Leakage Current at VR | IR | 1 (Max.) | A | See table above for specific values per type |
| Zener Voltage tested with pulses | 20 | ms | ||
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