Silicon PNP Darlington Transistor Central MPSA77 APM PBFREE with Epitaxial Planar Process in TO92 Case

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Product Description

Product Overview

The MPSA75 series devices are silicon PNP Darlington transistors manufactured using the epitaxial planar process. These transistors are specifically designed for applications that demand extremely high gain. They are available in the TO-92 case.

Product Attributes

Brand: CENTRAL SEMICONDUCTOR
Material: Silicon
Type: PNP Darlington Transistor
Manufacturing Process: Epitaxial Planar
Case: TO-92

Technical Specifications

Model	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCES)	Emitter-Base Voltage (VEBO)	Continuous Collector Current (IC)	Power Dissipation (PD)	Operating & Storage Junction Temp (TJ, Tstg)	Thermal Resistance (JA)	Cutoff Current (ICBO) @ VCB	Saturation Current (ICES) @ VCE	Reverse Current (IEBO) @ VEB	Breakdown Voltage (BVCBO) @ IC	Breakdown Voltage (BVCES) @ IC	Saturation Voltage (VCE(SAT)) @ IC, IB	On-Voltage (VBE(ON)) @ VCE, IB	DC Current Gain (hFE) @ VCE, IC	Transition Frequency (fT) @ VCE, IC
MPSA75	40 V	40 V	10 V	500 mA	625 mW	-65 to +150 C	200 C/W	100 nA @ 30V	500 nA @ 30V	100 nA @ 10V	40 V @ 100A	40 V @ 100A	1.5 V @ 100mA, 0.1mA	2.0 V @ 5.0V, 100mA	10K @ 5.0V, 10mA 10K @ 5.0V, 100mA	125 MHz @ 5.0V, 10mA
MPSA76	50 V	50 V	10 V	500 mA	625 mW	-65 to +150 C	200 C/W	100 nA @ 40V	500 nA @ 40V	100 nA @ 10V	50 V @ 100A	50 V @ 100A	1.5 V @ 100mA, 0.1mA	2.0 V @ 5.0V, 100mA	10K @ 5.0V, 10mA 10K @ 5.0V, 100mA	125 MHz @ 5.0V, 10mA
MPSA77	60 V	60 V	10 V	500 mA	625 mW	-65 to +150 C	200 C/W	100 nA @ 50V	500 nA @ 50V	100 nA @ 10V	60 V @ 100A	60 V @ 100A	1.5 V @ 100mA, 0.1mA	2.0 V @ 5.0V, 100mA	10K @ 5.0V, 10mA 10K @ 5.0V, 100mA	125 MHz @ 5.0V, 10mA