Fast switching diode ChipNobo BAV99 with less than 4nS reverse recovery time and low leakage current

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Product Description

Product Overview

This is a fast switching device with a switching speed less than 4nS and a reverse recovery time (TRR) of less than 4nS. It offers high stability and reliability, with low reverse leakage. The device has a maximum power dissipation of 225mW and is suitable for use in residential and commercial equipment. It is supplied in a SOT-23 small outline plastic package with a UL 94V-0 flammability rating and can be mounted in any position.

Product Attributes

Brand: ChipNobo
Package: SOT-23
Material: Epoxy (UL 94V-0 flammability rating)
Mounting Position: Any

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Fast Switching Device (TRR)		<4nS
Power Dissipation		225mW
Reverse Voltage	VR	100	V
Power Dissipation	Pd	225	mW
Operating Junction Temperature	Tj	150
Storage Temperature Range	Ts	-65 to +150
Average Rectified Current	IO	200	mA
Non-repetitive Peak Forward Current	IFM	400	mA
Peak Forward Surge Current	IFSM	1.0	A	@ tp=1ms; TA=25
Typical Thermal Resistance	RJA	500	/W	Valid provided that electrodes are kept at ambient temperature.
Reverse Voltage (Breakdown)	VRB	100	V	IB=100uA
Reverse Leakage Current	IR	1.0	uA	VR=100V
Forward Voltage	VF	0.715 to 1.00	V	IF=1mA to 50mA
Forward Voltage	VF	1.25	V	IF=150mA
Reverse Recovery Time	TRR	4	nS	IF= IR=10mA,RL=100, IRR=0.1xIR
Capacitance	CT	1.5	pF	VR=0V, f=1MHz