Silicon Controlled Rectifier Central 2N3670 PBFREE Featuring Hermetic Sealing and High Voltage Ratings
Product Overview
The CENTRAL SEMICONDUCTOR 2N3669 and 2N3670 are hermetically sealed Silicon Controlled Rectifiers (SCRs) designed for sensing circuit applications and control systems. These devices offer robust performance with ratings up to 16 Amps and voltages of 400 to 600 Volts. Higher voltage devices and specific electrical selections are available upon special order.
Product Attributes
- Brand: CENTRAL SEMICONDUCTOR
- Case Style: TO-3 50 MIL CASE
- Material: SILICON
- Packaging: Hermetically sealed
- Marking: FULL PART NUMBER
Technical Specifications
| Symbol | 2N3669 | 2N3670 | Units | Description |
|---|---|---|---|---|
| VRRM | 200 | 400 | V | Peak Repetitive Off-State Voltage |
| VDRM | 400 | 600 | V | Peak Repetitive Off-State Voltage |
| IT(RMS) | 16 | A | RMS On-State Current (TC=90C) | |
| ITSM | 200 | A | Peak One Cycle Surge Current (60Hz, TC=80C) | |
| IGM | 4.0 | A | Peak Gate Current | |
| PG(AV) | 0.5 | W | Average Gate Power Dissipation | |
| TJ, Tstg | -40 to +125 | C | Operating and Storage Junction Temperature | |
| JC | 1.7 | C/W | Thermal Resistance | |
| IRRM | 1.0 | mA | (VR=Rated VRRM, TC=100C) | |
| IDRM | 2.0 | mA | (VD=Rated VDRM, TC=100C) | |
| IGT | 1.0 | 40 | mA | (VD=7.0V) |
| IH | 0.5 | 50 | mA | (RG=1.0K) |
| VTM | 1.8 | V | (IT=25A) | |
| VGT | 2.0 | V | (VD=7.0V) | |
| dv/dt | 10 to 400 | V/s | (VD=VDRM, RG=1.0k, TC=100C) | |
| tgd | 500 | ns | (IG=125mA, diG/dt=1.25A/s) | |
| tq | 50 | s | (VD=VDRM, VR=35V, IT=10A, TC=90C) | |
Lead Code: 1) Gate, 2) Cathode, Case) Anode
Note: The 2N3669 and 2N3670 Silicon Controlled Rectifiers are discontinued and classified as End of Life (EOL). Last purchase orders are accepted six (6) months from the notice date, with final shipments twelve (12) months from the notice date. Minimum order quantities may apply. Replacement products are not specified.
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